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BFG591,115

Part No BFG591,115
Manufacturer NXP / Nexperia
Catalog RF Transistors (BJT)
Description TRANS NPN 15V 7GHZ SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 7GHz
Maximum Power Dissipation 2W
Typical Gain (hFE) (Min) 60 @ 70mA, 8V
Maximum Current Collector 200mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 098559-BFG591,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFG591,115 CAD Model

Description

Introducing the BFG591,115 RF Bipolar Transistor from NXP

Discover the superior performance of the BFG591,115, a high-quality RF bipolar transistor meticulously designed by NXP Semiconductors. This advanced component is specifically engineered to meet the demanding requirements of today's fast-paced and high-frequency applications. With its exceptional features and robust design, the BFG591,115 is an ideal choice for professionals seeking reliability and efficiency.

Key Features

  • High Frequency Operation: The BFG591,115 is optimized for high-frequency applications, operating effectively in the GHz range, which makes it suitable for a wide array of RF signal amplification tasks.
  • Low Noise Figure: It boasts a low noise figure, ensuring clear signal amplification with minimal distortion, critical for high-performance communication systems and sensitive signal processing.
  • High Gain: This transistor offers high gain levels, providing strong signal amplification that maintains the integrity of the original signal, which is vital for both analog and digital communication.
  • Excellent Linearity: The linearity of the BFG591,115 ensures that it can handle a variety of signal amplitudes without compromising the quality, making it highly versatile for different modulation schemes.
  • Robust Thermal Performance: Designed with thermal efficiency in mind, the BFG591,115 can dissipate heat effectively, which contributes to its reliability and longevity even under strenuous operating conditions.

Applications

The BFG591,115 from NXP is suitable for a diverse range of applications, including but not limited to:

  • Wireless communication infrastructure
  • RF power amplifiers
  • Low-noise amplifiers for receivers
  • Oscillators
  • IF amplifiers in TV and radio broadcasting equipment

Quality and Reliability

NXP Semiconductors is renowned for their commitment to quality, and the BFG591,115 is no exception. Each transistor is manufactured with the highest standards of precision and subjected to rigorous testing to ensure optimal performance and durability. With NXP's BFG591,115, you can expect a product that not only meets but exceeds industry standards for RF applications.

Whether you're designing sophisticated communication systems or seeking to enhance your existing electronic designs, the BFG591,115 RF bipolar transistor is a component that promises to deliver top-notch performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.8667 $55.4668
9+ $11.3778 $102.4002
14+ $11.0223 $154.3122
19+ $10.6667 $202.6673
25+ $10.3112 $257.7800
33+ $9.2445 $305.0685
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Availability: 4,800 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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