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BFG97,135

Part No BFG97,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS NPN 15V 100MA 5GHZ SOT223 / Trans RF BJT NPN 15V 0.1A 1000mW 4-Pin(3+Tab) SC-73 T/R
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Maximum) 15V
Frequency - Transition 5.5GHz
Power - Max 1W
DC Current Gain (hFE) (Minimum) @ Ic, Vce 25 @ 70mA, 10V
Current - Collector (Ic) (Maximum) 100mA
Operating Temperature Range 175°C (TJ)
Mounting SMD
Package TO-261-4, TO-261AA
Manufacturer Package SOT-223
Win Source Part Number 769979-BFG97,135
Popularity Medium
Supply and Demand Status Limited
Family Name BFG97
Introduction Date September 01, 1995
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BFG97,135 CAD Model

Description

The BFG97,135 from NXP is a high-performance, silicon NPN bipolar junction transistor designed to meet the stringent requirements of contemporary RF front-end applications. This versatile component is optimized for high-frequency operations, making it an ideal choice for a wide range of applications, including but not limited to, telecommunications, satellite communication systems, and professional RF amplification circuits.

Key Features

  • High Gain Bandwidth Product: The BFG97,135 boasts a substantial gain bandwidth product, allowing it to efficiently amplify signals in the high-frequency spectrum.
  • Low Noise Figure: Engineered for optimal signal integrity, it has a low noise figure which is critical in maintaining the quality of the signal in sensitive RF circuits.
  • High Maximum Frequencies: With an ability to operate at high frequencies, this transistor can be used in applications that require rapid signal processing and high-speed operations.
  • Robust Power Handling: The device is capable of handling significant power levels, making it suitable for high-power RF applications.

Applications

  • RF Power Amplifiers
  • Low-Noise Amplifiers
  • Oscillator Circuits
  • Mixers
  • Telecommunication Infrastructure
  • Satellite Communication Equipment

Technical Specifications

Parameter Value Configuration Single Transistor Polarity NPN DC Current Gain (hFE) (Min) 40 at 100 mA, 5 V Power - Max 1.8 W Frequency - Transition 7 GHz Noise Figure (dB) (Min @ f) 1.2 dB at 1 GHz

With its combination of high-frequency performance, power handling, and low noise, the BFG97,135 from NXP is an excellent choice for designers looking to create robust, high-performance RF systems. Its reliability and efficiency make it a valuable component in any RF signal chain.

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