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BLF6G38LS100

Part No BLF6G38LS100
Manufacturer NXP / Nexperia
Catalog OEM Parts (A - B)
Description S Band Si N-channel Rf Power Mosfet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 34 A
Drain to Source Breakdown Voltage 65 V
Drain to Source Resistance 150 mΩ
Drain to Source Voltage (Vdss) 65 V
Element Configuration Single
Gate to Source Voltage (Vgs) 13 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -65 °C
Number of Pins 3
RoHS Compliant
Win Source Part Number 1004976-BLF6G38LS100
Categories OEM Parts(A-B)
Manufacturer NXP
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BLF6G38LS100 CAD Model

Description

The NXP BLF6G38LS100 is a state-of-the-art LDMOS power transistor designed specifically for high-efficiency RF power amplification applications. This advanced semiconductor device is tailored for use in a variety of broadcasting, industrial, medical, and RF energy applications.

Key Features

  • Frequency Range: The BLF6G38LS100 operates effectively over a broad frequency range, making it versatile for different RF applications.
  • High Power: With an exceptional output power capability, it is suitable for high-power requirements in applications such as broadcast transmitters and industrial heating.
  • Efficiency: The LDMOS technology employed in the BLF6G38LS100 ensures high efficiency, which translates to lower energy consumption and reduced thermal loads.
  • Robustness: This transistor is engineered to withstand harsh conditions, ensuring reliability and longevity even in demanding environments.
  • Integrated ESD Protection: Electrostatic discharge can be detrimental to electronic components. The BLF6G38LS100 comes with built-in protection to safeguard against ESD events.

Applications

  • Broadcasting: Ideal for use in television and radio broadcast transmitters due to its high power and wide frequency range.
  • Industrial: Can be used in RF heating and plasma generation, benefiting from its robustness and efficiency.
  • Medical: Suitable for medical applications such as MRI and RF ablation, where reliability and precision are critical.
  • RF Energy: Its efficiency and thermal performance make it a great choice for RF energy systems.

Technical Specifications

The BLF6G38LS100 boasts impressive technical specifications, including a high operating efficiency, wideband capability, and a thermally-enhanced package. It is designed to deliver consistent performance and is compatible with a range of impedance matching networks and other RF components.

For detailed technical specifications, reference datasheets, and application notes, potential customers are encouraged to visit the NXP Semiconductors official website or contact their sales and support team for more information.

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