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BLF8G10LS-270

Part No BLF8G10LS-270
Manufacturer NXP / Nexperia
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Reference Date Code 12+
Reference case SOT502B
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 722703-BLF8G10LS-270
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BLF8G10LS-270 CAD Model

Description

NXP BLF8G10LS-270 LDMOS Power Transistor

The NXP BLF8G10LS-270 is a high-performance LDMOS power transistor designed for a broad range of RF power applications. This device is particularly suited for use in broadcast transmitters and industrial applications that require high reliability and efficiency at high frequencies. The BLF8G10LS-270 operates at a frequency range up to 1 GHz, making it a versatile component for various high-frequency circuit designs.

Key Features

  • High Efficiency: The BLF8G10LS-270 boasts excellent efficiency which is crucial for reducing thermal loads and improving the longevity of the device.
  • High Power: With an output power of 270 W, this LDMOS transistor can handle significant power levels, making it suitable for high-power applications.
  • Wide Frequency Range: Designed to operate effectively up to 1 GHz, this component is versatile enough to be used in a variety of RF applications.
  • Integrated ESD Protection: The transistor comes with built-in electrostatic discharge protection, enhancing its robustness and reliability in demanding environments.
  • Excellent Thermal Stability: The BLF8G10LS-270 is engineered to maintain stable performance over a wide temperature range, ensuring consistent operation under varying conditions.

Applications

The NXP BLF8G10LS-270 is ideal for a range of applications, including:

  • Industrial heating and drying systems
  • RF energy applications
  • Plasma generators
  • Medical applications such as MRI and RF ablation
  • Broadcast transmitters for television and radio

Product Specifications

The BLF8G10LS-270 is characterized by its robust construction and is encapsulated in a high-quality ceramic package that provides excellent thermal conductivity and mechanical durability. The device is designed for ease of integration into circuit designs and is capable of withstanding high mismatch conditions without damage.

With its combination of high power, efficiency, and frequency range, the NXP BLF8G10LS-270 LDMOS power transistor is a top choice for designers looking for a reliable and versatile RF power solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $94.1244 $94.1244
2+ $77.2302 $154.4604
3+ $74.8174 $224.4522
4+ $72.4035 $289.6140
5+ $69.9895 $349.9475
6+ $62.7500 $376.5000
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