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BSP230

Part No BSP230
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 300V 0.21A SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 300V
Continuous Drain Current at 25°C 210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.55V @ 1mA
Max Input Capacitance 90pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 17 Ohm @ 170mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 237299-BSP230
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSP230 CAD Model

Description

The NXP BSP230 is a high-performance, P-channel TrenchMOS™ transistor designed primarily for switching applications. This product is part of NXP's extensive range of field-effect transistors, which are renowned for their efficiency, reliability, and thermal performance. The BSP230 is particularly suitable for use in power management circuits, load switching, and various other applications where a robust and efficient P-channel MOSFET is required.

Key Features

  • Low Threshold Voltage: The device operates at a low threshold voltage, making it suitable for low-voltage applications and ensuring efficient switching performance even at reduced gate voltages.
  • High-Speed Switching: The BSP230 is designed for high-speed switching applications, providing quick response times and minimizing energy loss during the switching process.
  • Low On-State Resistance: With its low on-state resistance (R<sub>DS(on)), the BSP230 offers reduced conduction losses, leading to increased overall efficiency in the application it is used within.
  • Enhanced Durability: The transistor's robust construction ensures a high degree of durability and reliability, making it suitable for demanding environments and applications.

Applications

The versatility of the NXP BSP230 allows it to be used across a wide range of applications. Some of the typical applications include:

  • Power management circuits
  • Battery-powered devices
  • Load switching
  • Motor control systems
  • DC-DC converters

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20 V Gate-Source Voltage (V<sub>GS) ±8 V Continuous Drain Current (I<sub>D) -3 A Power Dissipation (P<sub>D) 1.25 W Operating Temperature Range -55°C to +150°C

The NXP BSP230 offers a perfect balance between performance and efficiency, making it an ideal choice for designers looking for a reliable P-channel MOSFET. Its small form factor and low power consumption also make it a highly desirable component for compact, energy-sensitive designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5778 $52.0020
215+ $0.4741 $101.9315
330+ $0.4593 $151.5690
450+ $0.4445 $200.0250
585+ $0.4297 $251.3745
780+ $0.3852 $300.4560
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 140 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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