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BSS84AK

Part No BSS84AK
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 50V 0.16A 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 160mA
Maximum Rds On at Id,Vgs 7.5 Ohm @ 100mA, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.35nC @ 5V
Max Input Capacitance 36pF @ 25V
Maximum Power Dissipation 445mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 237405-BSS84AK
Family Name BSS84AK
Introduction Date May 23, 2011
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian BSS84AK CAD Model

Description

Introducing the BSS84AK P-Channel Enhancement Mode Field-Effect Transistor

The BSS84AK is a cutting-edge P-Channel Enhancement Mode Field-Effect Transistor (MOSFET) designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This high-performance transistor is a pivotal component for modern electronic applications, catering to the needs of energy efficiency and miniaturization.

Key Features

      
  • Low Threshold Voltage: The BSS84AK operates at a low threshold voltage, making it suitable for low voltage applications and ensuring a low on-state resistance at low gate voltages.
  •   
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, providing efficient performance and reduced switching losses.
  •   
  • Surface-Mount Package: The device comes in a compact SOT-23 package, which is perfect for space-constrained applications while offering excellent thermal and electrical performance.
  •   
  • Energy Efficiency: The BSS84AK is designed to minimize on-state resistance, thus reducing power losses and improving overall energy efficiency in electronic circuits.

Applications

The versatility of the BSS84AK allows it to be used in a wide array of applications. It is particularly well-suited for:

      
  • Load Switching
  •   
  • Power Management
  •   
  • Battery Management Systems
  •   
  • DC/DC Converters
  •   
  • Motor Drives

Technical Specifications

The BSS84AK boasts impressive technical specifications that make it a robust choice for various electronic designs:

      
  • Drain-Source Voltage (VDS): -50 V
  •   
  • Continuous Drain Current (ID): -130 mA
  •   
  • Power Dissipation (PD): 300 mW
  •   
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable components. The BSS84AK MOSFET is no exception, having undergone rigorous testing to ensure it meets the stringent standards required for industrial and commercial use. With NXP's reputation for excellence, you can trust the BSS84AK to perform consistently in your electronic projects.

Whether you're designing power-efficient portable devices or robust industrial machinery, the BSS84AK from NXP Semiconductors is an excellent choice for your P-Channel MOSFET needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,120+ $0.0236 $50.0320
4,525+ $0.0221 $100.0025
7,010+ $0.0214 $150.0140
10,055+ $0.0199 $200.0945
13,025+ $0.0192 $250.0800
16,305+ $0.0184 $300.0120
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600,000 pieces
MOQ: 2120 pcs
Order Increment : 1 pcs
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