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BUK7507-30B,127

Part No BUK7507-30B,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description PFET, 75A I(D), 30V, 0.007OHM, 1 / N-Channel 30 V 75A (Tc) 157W (Tc) Through Hole TO-220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2427 pF @ 25 V
Power Dissipation (Max) 157W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 0000.00.0000
Other Names 2156-BUK7507-30B127,NEXNXPBUK7507-30B,127
Standard Package 1
Win Source Part Number 1050066-BUK7507-30B,127
Ultra Librarian 3D Model Ultra Librarian BUK7507-30B,127 CAD Model

Description

Introducing the BUK7507-30B,127 Power MOSFET from NXP Semiconductors

Discover the efficiency and reliability of the BUK7507-30B,127, a high-performance Power MOSFET brought to you by NXP Semiconductors. This advanced power management solution is designed to meet the rigorous demands of modern electronic applications, delivering both high power density and energy-saving features.

Key Features:

  • Low On-State Resistance (RDS(on)): The BUK7507-30B,127 boasts an exceptionally low on-state resistance, ensuring minimal voltage drop across the device and enhanced efficiency during operation.
  • High Current Capability: With its ability to handle a continuous drain current of up to 75A, this MOSFET can easily support applications with high current demands.
  • 30V Drain-Source Voltage (VDS): The device is optimized for systems that operate around 30 volts, providing a robust platform for a wide range of power applications.
  • Advanced TrenchMOS Technology: Utilizing NXP's cutting-edge TrenchMOS technology, the BUK7507-30B,127 offers reduced conduction losses and improved switching performance.
  • Thermal Management: The MOSFET comes in a TO-220 package that is known for its excellent thermal characteristics, ensuring the device remains cool even under high power conditions.

Applications:

The BUK7507-30B,127 is ideal for a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Battery-powered devices
  • Automotive applications
  • Switching regulators

Quality and Reliability:

NXP Semiconductors is renowned for its commitment to quality and reliability. The BUK7507-30B,127 is no exception and is built to meet the highest industry standards. It is designed for longevity and stable operation over a wide range of temperatures and conditions.

Environmental Considerations:

The BUK7507-30B,127 is also RoHS compliant, reflecting NXP's dedication to environmental responsibility. This ensures that the MOSFET is free from hazardous substances, making it suitable for use in a variety of markets, including those with strict environmental regulations.

Whether you are designing a new power system or upgrading an existing one, the BUK7507-30B,127 from NXP Semiconductors is an excellent choice for a reliable and efficient Power MOSFET solution.

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