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BUK768R1-100E,118

Part No BUK768R1-100E,118
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 108nC @ 10V
Max Input Capacitance 7380pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 263W (Tc)
Maximum Rds On at Id,Vgs 8.1 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 140199-BUK768R1-100E,118
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BUK768R1-100E,118 CAD Model

Description

Product Overview: BUK768R1-100E,118

The BUK768R1-100E,118 is a high-performance PowerMOS transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This robust component is a vital part of modern electronic circuits, offering efficient power switching and control in a compact package. It is ideal for a wide range of applications, including automotive systems, power management, and industrial automation.

Key Features

  • Low On-State Resistance: The BUK768R1-100E,118 boasts an extremely low on-state resistance (R<sub>DS(on)), which ensures minimal power loss during operation and enhances overall efficiency.
  • High-Speed Switching: Designed for fast switching applications, this transistor can handle high-frequency operations with ease, making it suitable for modern, high-performance circuits.
  • High Current Capability: With an ability to support high current loads, this device is capable of handling demanding power requirements, ensuring reliable performance under various conditions.
  • Thermal Performance: The BUK768R1-100E,118 is encapsulated in a TO-220 package, which provides excellent thermal conduction and helps maintain stability even at elevated temperatures.
  • Automotive Grade: This product meets the stringent requirements for automotive applications, offering enhanced reliability and durability in harsh environments.

Applications

The versatility of the BUK768R1-100E,118 makes it suitable for a variety of applications, including:

  • Automotive engine control units and powertrain systems
  • DC to DC converters
  • Motor drives and controllers
  • Power supplies
  • LED lighting systems

Product Specifications

The BUK768R1-100E,118 is characterized by its impressive technical specifications:

  • Drain-source voltage (V<sub>DS): 100V
  • Continuous drain current (I<sub>D): 75A
  • Gate-source voltage (V<sub>GS): ±20V
  • Maximum power dissipation (P<sub>D): 110W
  • Operating temperature range: -55°C to +175°C

With its combination of efficiency, reliability, and power handling capabilities, the BUK768R1-100E,118 from NXP is a top choice for designers and engineers looking to incorporate a high-quality PowerMOS transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $18.4892 $73.9568
8+ $15.1709 $121.3672
12+ $14.6962 $176.3544
17+ $14.2227 $241.7859
22+ $13.7480 $302.4560
29+ $12.3262 $357.4598
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,960 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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