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BUK7C5R4-100EJ

Part No BUK7C5R4-100EJ
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V D2PAK-7 / N-Channel 100 V Surface Mount D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number BUK7C5
Standard Package 800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346190-BUK7C5R4-100EJ
Ultra Librarian 3D Model Ultra Librarian BUK7C5R4-100EJ CAD Model

Description

Introducing the BUK7C5R4-100EJ Power MOSFET by NXP

The BUK7C5R4-100EJ is a state-of-the-art Power MOSFET brought to you by NXP Semiconductors, a leader in the field of high-performance mixed-signal electronics. This product is designed to deliver high efficiency and power density for a wide range of applications. With its robust construction and advanced technology, the BUK7C5R4-100EJ is the perfect choice for engineers looking to improve system performance in power conversion and management tasks.

At the heart of this device is NXP's innovative TrenchMOS™ technology, which provides reduced on-state resistance (RDS(on)) and lower switching losses. The BUK7C5R4-100EJ features a drain-source voltage (VDS) of 100V, and a continuous drain current (ID) of 5.4A at 25°C, making it suitable for high-efficiency power supplies, motor control circuits, and DC-DC converters.

The device is housed in a compact LFPAK33 (Power-SO8) package, which not only saves space but also ensures excellent thermal performance and ruggedness. Its gull-wing leads provide better solderability and thermal cycling performance compared to traditional flat leads. Furthermore, the BUK7C5R4-100EJ is designed to handle high pulse currents, making it an ideal choice for applications that experience transient loads.

Key features of the BUK7C5R4-100EJ include:

  • Low threshold voltage (VGS(th)) for improved efficiency at low gate drive voltages
  • Fast switching characteristics, which reduce energy loss during power conversion
  • High avalanche ruggedness, ensuring reliability under repetitive avalanche conditions
  • Logic level compatible, allowing direct interfacing with microcontroller outputs

Engineers can rely on the BUK7C5R4-100EJ for its exceptional quality and performance in demanding environments. Its robustness and efficiency make it an excellent choice for automotive applications, industrial power systems, and any circuit requiring a high-performance Power MOSFET. With NXP's commitment to quality and innovation, the BUK7C5R4-100EJ stands out as a superior component for your power management solutions.

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