Introducing the BUK7Y07-30B MOSFET by NXP Semiconductors
The BUK7Y07-30B is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor designed by NXP Semiconductors, a leader in the industry known for their innovative and reliable products. This MOSFET is a testament to NXP's commitment to providing advanced solutions for power management and switching applications.
Key Features of the BUK7Y07-30B
- Low On-State Resistance: This MOSFET features a very low on-state resistance (RDS(on)) of just 30 mΩ at VGS = 10 V, which translates to reduced conduction losses and improved overall efficiency in your applications.
- High Continuous Drain Current: With a continuous drain current (ID) of up to 75 A, the BUK7Y07-30B can handle significant power, making it well-suited for high-current applications.
- High-Speed Switching: The device is optimized for fast switching, which is essential for efficient operation in power conversion systems.
- Robust Thermal Performance: Thanks to its excellent thermal characteristics, this MOSFET can operate reliably in environments with high ambient temperatures, ensuring consistent performance and longevity.
- Standard Level Gate Drive: The BUK7Y07-30B operates at standard gate drive voltages, which makes it compatible with a wide range of existing control circuits and simplifies the design process.
Applications
The versatility of the BUK7Y07-30B MOSFET makes it ideal for a variety of applications, including:
- DC/DC converters
- Motor drives
- Power management systems
- Automotive applications
- High-performance computing
Quality and Reliability
NXP's BUK7Y07-30B is manufactured to meet the highest quality and reliability standards. It is designed to withstand harsh conditions and provide a long operational lifespan, which is crucial for industrial and automotive applications that demand consistent performance over time.
By choosing the BUK7Y07-30B for your power management and switching needs, you're selecting a product from a trusted manufacturer that stands at the forefront of semiconductor technology. Its combination of efficiency, power handling, and thermal performance makes it an exceptional choice for designers looking to enhance the performance of their systems.