Product Overview: BUK9614-60E118 - NXP Semiconductors

The BUK9614-60E118 is a high-performance, N-channel TrenchMOS™ standard level field-effect transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is tailored for automotive applications and other high-demanding environments that require robust and efficient power management solutions.

Key Features

• High Efficiency: With its TrenchMOS technology, the BUK9614-60E118 offers low on-state resistance (R<sub>DS(on)), which translates into high efficiency and reduced heat generation during operation.
• High Current Capability: This MOSFET is capable of handling continuous drain currents up to 60A, making it suitable for high-power applications.
• Standard Level Gate Drive: The device operates with a standard gate drive voltage, making it compatible with a wide range of control circuits and simplifying design integration.
• Robust Thermal Performance: The BUK9614-60E118 is encapsulated in a TO-220AB package, which provides excellent thermal characteristics and aids in efficient heat dissipation.
• Automotive Qualified: Designed to meet the rigorous standards of the automotive industry, this MOSFET is AEC-Q101 qualified, ensuring reliability and performance under harsh conditions.

Applications

The versatility of the BUK9614-60E118 makes it ideal for a broad range of applications, particularly in the automotive sector. It can be used in:

• Powertrain systems
• Body control modules
• DC/DC converters
• Motor drives
• LED lighting systems

Technical Specifications

The BUK9614-60E118 is a testament to NXP's commitment to providing advanced semiconductor solutions that meet the evolving needs of modern automotive and industrial applications.