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MMRF1024HSR5

Part No MMRF1024HSR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.5GHZ NI-1230-4 / RF Mosfet 28 V 700 mA 2.5GHz 14.1dB 50W NI-1230-4LS2L
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Technology LDMOS
Configuration Dual
Frequency 2.5GHz
Gain 14.1dB
Voltage - Test 28 V
Current - Test 700 mA
Power - Output 50W
Voltage - Rated 65 V
Mounting Type Chassis Mount
Package / Case NI-1230-4LS2L
Supplier Device Package NI-1230-4LS2L
Base Product Number MMRF1024
Standard Package 50
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1345999-MMRF1024HSR5
Ultra Librarian 3D Model Ultra Librarian MMRF1024HSR5 CAD Model

Description

The MMRF1024HSR5 is a state-of-the-art RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This high-performance device is specifically engineered to meet the demanding requirements of high-power, high-frequency applications. It is widely used in broadcast transmission, industrial, scientific, medical (ISM), and RF energy applications.

Key Features

  • Frequency Range: The MMRF1024HSR5 operates effectively over a broad frequency range, making it highly versatile for various RF applications.
  • High Output Power: This device is capable of delivering a high output power, which is essential for applications requiring strong signal transmission or high-power operations.
  • High Efficiency: With its advanced LDMOS technology, the MMRF1024HSR5 achieves high efficiency, reducing thermal stress and enabling more compact system designs due to lower cooling requirements.
  • Durability: Built to withstand tough operating conditions, this transistor offers excellent ruggedness and reliability, ensuring long-term performance stability.
  • Integrated ESD Protection: The MMRF1024HSR5 comes with integrated electrostatic discharge (ESD) protection to safeguard against sudden voltage spikes, enhancing its durability and lifespan.

Applications

The versatility of the MMRF1024HSR5 allows it to be used in a variety of applications. It is particularly well-suited for:

  • FM broadcast transmitters
  • VHF television transmitters
  • Industrial heating and welding equipment
  • Medical imaging and therapy systems
  • Plasma generation
  • Particle accelerators

Technical Specifications

The MMRF1024HSR5 boasts impressive technical specifications that contribute to its high performance:

  • Operating Voltage: It is designed to operate at a specific voltage, providing a balance between power efficiency and output.
  • Gain: High gain levels ensure that the input signal is amplified effectively to produce a strong output signal.
  • Thermal Resistance: The transistor's low thermal resistance helps to dissipate heat efficiently, maintaining operational integrity even under high-power conditions.

With its robust design and advanced features, the MMRF1024HSR5 by NXP Semiconductors represents a superior choice for designers seeking a reliable and powerful RF solution.

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