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MMRF2005GNR1

Part No MMRF2005GNR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description SINGLE W-CDMA RF LDMOS WIDEBAND / RF Mosfet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP USA Inc.
Series *
Package Tape & Reel
Product Status Obsolete
Base Product Number MMRF2
Standard Package 500
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 1346019-MMRF2005GNR1
Ultra Librarian 3D Model Ultra Librarian MMRF2005GNR1 CAD Model

Description

Product Overview: NXP MMRF2005GNR1

The NXP MMRF2005GNR1 is a state-of-the-art RF power transistor designed to deliver exceptional performance for a wide range of applications. This device is part of NXP's highly acclaimed RF power LDMOS transistor family, which is renowned for its high efficiency, reliability, and thermal stability. The MMRF2005GNR1 is specifically engineered to meet the demanding requirements of high-power amplifiers in commercial, aerospace, and defense systems.

Key Features

  • Frequency Range: The MMRF2005GNR1 operates efficiently over a broad frequency range, making it versatile for various RF applications.
  • High Power: With an impressive output power capability, this transistor is designed to handle high-power operations with ease.
  • Efficiency: It offers outstanding efficiency, which is critical for systems where power consumption and heat dissipation are of paramount importance.
  • Thermal Performance: The MMRF2005GNR1 boasts excellent thermal performance, ensuring stability and reliability even under strenuous conditions.
  • Ruggedness: Its rugged design allows it to withstand severe load mismatch conditions, which contributes to its durability and longevity.

Applications

The NXP MMRF2005GNR1 is ideal for a variety of high-frequency applications including:

  • Broadcast transmitters
  • Industrial, scientific, and medical (ISM) applications
  • Aerospace and defense systems
  • Cellular infrastructure
  • High-power RF amplifiers

Product Specifications

The MMRF2005GNR1 is designed with the following specifications:

  • Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)
  • Package: Over-molded plastic
  • Operating Voltage: Specified at a particular voltage for optimal performance
  • Gain: High gain levels for efficient signal amplification

In conclusion, the NXP MMRF2005GNR1 RF power transistor is a robust and efficient solution for high-power RF applications that require reliability and performance. Its comprehensive features and specifications make it a top choice for designers looking to enhance their RF systems.

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