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MRF19090SR3

Part No MRF19090SR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.93GHZ NI-880S / Trans RF MOSFET N-CH 65V 3-Pin NI-880S T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 1.93GHz
Gain 11.5dB
Voltage - Test 26V
Current - Test 750mA
Power - Output 90W
Voltage Rating DC 65V
Package NI-880S
Manufacturer Package NI-880S
Win Source Part Number 789403-MRF19090SR3
Popularity Medium
Supply and Demand Status Balance
Family Name MRF19090S
Introduction Date September 29, 2001
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF19090SR3 CAD Model

Description

The MRF19090SR3 is a high-performance RF power LDMOS transistor designed and manufactured by NXP Semiconductors. This device is specifically engineered for broadband commercial and industrial applications with frequencies ranging from 1.8 to 2.0 GHz. With its exceptional versatility, the MRF19090SR3 is an ideal choice for base station applications in the telecommunications sector, including GSM, CDMA, WCDMA, LTE, and more.

Key Features

  • Frequency Range: The MRF19090SR3 operates efficiently within the 1.8 to 2.0 GHz frequency band, making it highly suitable for a variety of RF applications.
  • Output Power: This LDMOS transistor can deliver a high output power of 90 Watts CW, ensuring robust signal amplification for demanding applications.
  • High Gain: It features a high gain of 18 dB (typical), which contributes to its effectiveness in signal amplification and overall performance.
  • High Efficiency: With an efficiency of 35% (typical), the MRF19090SR3 allows for energy-saving operations, which is crucial for sustainable and cost-effective solutions.
  • Integrated ESD Protection: The device includes integrated ESD protection, which enhances its durability and reliability by safeguarding against electrostatic discharge events.
  • Thermally Enhanced Package: The transistor is housed in a thermally enhanced package, ensuring excellent thermal stability and longevity under high-temperature operating conditions.

Applications

The MRF19090SR3 is suitable for a wide range of applications, including but not limited to:

  • Telecommunication Base Stations (GSM, CDMA, WCDMA, LTE)
  • Broadband Wireless Access Systems
  • Industrial, Scientific, and Medical (ISM) Applications
  • Commercial RF Power Amplifiers

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the MRF19090SR3 is no exception. It is produced using the latest LDMOS technology, ensuring high performance and consistency. The device is also RoHS compliant, reflecting NXP's dedication to environmental responsibility and user safety.

Whether for commercial RF power amplifiers or for the backbone of wireless infrastructure, the MRF19090SR3 from NXP stands out as a top-tier component for RF power amplification needs.

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