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MRF5S19100HSR3

Part No MRF5S19100HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 1.99GHZ NI-780S
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity LDMOS
Frequency 1.93GHz to 1.99GHz
Gain 13.9dB
Voltage - Test 28V
Current - Test 1A
Power - Output 22W
Voltage Rating 65V
Case / Package NI-780S
Win Source Part Number 1079683-MRF5S19100HSR3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MRF5S19100HSR3 CAD Model

Description

Introducing the MRF5S19100HSR3 RF Power Transistor by NXP

The MRF5S19100HSR3 is a high-performance RF power transistor designed by NXP Semiconductors, a leader in the field of high-frequency power solutions. This device is specifically engineered to deliver exceptional performance in a wide range of applications, including but not limited to, broadband communications, aerospace, and defense systems.

Constructed with NXP's advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, the MRF5S19100HSR3 is capable of operating at a frequency range up to 2.0 GHz. This makes it an ideal choice for applications such as cellular base station amplifiers, particularly those utilizing GSM, CDMA, W-CDMA, TD-SCDMA, and LTE technologies.

With its high power output, the MRF5S19100HSR3 can deliver up to 100 watts of continuous wave power, ensuring reliable and consistent performance. The high gain value of this device also contributes to its efficiency, providing a gain of 16 dB at 1.99 GHz. This allows for better signal amplification with less power consumption, making it a cost-effective solution for system designers.

The robust design of the MRF5S19100HSR3 includes built-in features to enhance its durability and longevity. It boasts excellent thermal stability and is encapsulated in a ceramic package that provides superior heat dissipation. This ensures that the device operates within safe temperature ranges, even under high-stress conditions. Additionally, its high breakdown voltage ensures that it can handle voltage spikes without degradation in performance.

For ease of integration, the MRF5S19100HSR3 comes with an industry-standard package footprint. This simplifies the design process for engineers and allows for compatibility with a wide range of existing circuit designs. Moreover, NXP provides comprehensive technical support, including detailed datasheets, application notes, and design resources to assist developers in harnessing the full potential of this powerful RF power transistor.

In summary, the MRF5S19100HSR3 from NXP is a testament to cutting-edge RF power technology, offering unparalleled performance, efficiency, and reliability for demanding wireless communication systems. Its combination of high power, high gain, and robust construction makes it a top choice for professionals seeking to enhance their RF applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $60.5647 $60.5647
3+ $49.6950 $149.0850
4+ $48.1416 $192.5664
5+ $46.5881 $232.9405
7+ $45.0358 $315.2506
9+ $40.3765 $363.3885
!
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Availability: 3,330 pieces
Order Increment : 1 pcs
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