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MRF6S23140HR3

Part No MRF6S23140HR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 68V 2.39GHZ NI-880 / Trans RF MOSFET N-CH 68V 3-Pin NI-880 T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel package
Part Status Obsolete(EOL)
Transistor Type LDMOS
Frequency 2.39GHz
Gain 15.2dB
Voltage - Test 28V
Current - Test 1.3A
Power - Output 28W
Voltage Rating DC 68V
Package NI-880
Manufacturer Package NI-880
Win Source Part Number 789443-MRF6S23140HR3
Popularity Medium
Supply and Demand Status Limited
Family Name MRF6S23140H
Introduction Date October 08, 2005
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian MRF6S23140HR3 CAD Model

Description

The MRF6S23140HR3 is a high-performance RF power transistor from the reputable manufacturer NXP Semiconductors. This robust transistor is designed to deliver exceptional power and efficiency, making it an ideal choice for a wide range of applications, including commercial and industrial RF power amplifiers.

Key Features

  • Frequency Range: The MRF6S23140HR3 operates at a frequency range of 2.11 to 2.17 GHz, which is suitable for various high-frequency applications.
  • Output Power: It boasts a high output power of 28 W CW, ensuring strong signal transmission capabilities.
  • High Gain: With a power gain of 15 dB, this transistor can amplify RF signals effectively, maintaining signal integrity.
  • High Efficiency: The MRF6S23140HR3 offers a high drain-source efficiency of 32%, minimizing power loss and heat generation during operation.
  • Integrated ESD Protection: It includes built-in Electrostatic Discharge (ESD) protection features, enhancing the durability and longevity of the device.

Applications

The transistor is well-suited for a variety of applications, including but not limited to:

  • Base station applications for wireless communication
  • RF power amplifiers for broadband communications
  • Industrial, scientific, and medical (ISM) band applications
  • High-power RF circuits and systems

Robust Design

The MRF6S23140HR3 is constructed with NXP's advanced LDMOS technology, which is known for its high resistance to breakdown and thermal stability. This technology ensures reliable operation even under demanding conditions. The transistor is also encapsulated in a ceramic package, which provides excellent thermal management and resistance to environmental factors.

Easy Integration

Designed with the user in mind, the MRF6S23140HR3 is easy to integrate into existing systems. It comes in a compact form factor with an industry-standard footprint, allowing for seamless compatibility with a wide range of circuit designs and PCB layouts.

Whether you are designing high-power RF amplifiers or looking for a reliable transistor for your communication infrastructure, the MRF6S23140HR3 from NXP Semiconductors is a choice that promises performance and reliability.

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