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MRF6V10010NR4

Part No MRF6V10010NR4
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 100V 1.09GHZ PLD-1.5
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Active
Technology LDMOS
Frequency 1.09GHz
Gain 25dB
Voltage - Test 50 V
Current - Test 10 mA
Power - Output 10W
Voltage - Rated 100 V
Mounting Type Surface Mount
Package / Case PLD-1.5
Supplier Device Package PLD-1.5
Base Product Number MRF6V10010
Standard Package 100 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644206-MRF6V10010NR4
Ultra Librarian 3D Model Ultra Librarian MRF6V10010NR4 CAD Model

Description

The MRF6V10010NR4 is a high-performance RF power LDMOS transistor designed by NXP Semiconductors, a leader in the manufacturing of advanced semiconductor solutions. This device is specifically engineered to meet the demanding requirements of high-power applications in the VHF to UHF frequency range, making it an ideal choice for commercial, aerospace, and defense communication systems.

Key Features:

  • Frequency Range: The MRF6V10010NR4 operates effectively in a broad frequency range, making it versatile for various applications.
  • High Output Power: It delivers exceptional output power, which is crucial for applications that require strong signal transmission or amplification.
  • High Gain: The device offers high gain performance, ensuring efficient signal amplification and reducing the need for additional stages in the signal chain.
  • High Efficiency: With its high efficiency, the MRF6V10010NR4 conserves energy and minimizes heat generation, which is vital for maintaining system reliability and longevity.
  • Ruggedness: It is designed to withstand harsh conditions, making it a reliable choice for mission-critical applications where durability is essential.
  • Thermal Performance: Excellent thermal performance is guaranteed by the device's design, which helps in maintaining operational stability under varying temperature conditions.

Applications:

The versatility of the MRF6V10010NR4 allows it to be used in a wide array of applications, including but not limited to:

  • Commercial and Consumer RF Power Amplifiers
  • Broadcast Transmitters
  • Industrial, Scientific, and Medical (ISM) Applications
  • Aerospace and Defense Communication Systems
  • Land Mobile Radios
  • Base Station Infrastructure for Mobile Communications

Quality and Reliability:

NXP Semiconductors is known for its commitment to quality and reliability. The MRF6V10010NR4 is manufactured with stringent quality control processes, ensuring that each device meets the high standards expected by customers in various industries. With its robust construction and proven performance, the MRF6V10010NR4 is a product that system designers and engineers can trust for their high-power RF application needs.

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