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Same model may have multiple batches, images only for reference.
HUF75307D3 Fairchild/ON Semiconductor
Same model may have multiple batches, images only for reference.

HUF75307D3

Part No HUF75307D3
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 15A IPAK
Datasheet
HUF75307D3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 20V
Max Input Capacitance 250pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-251AA
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 102743-HUF75307D3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian HUF75307D3 CAD Model

Description

The HUF75307D3 is an N-Channel MOSFET from Fairchild/ON Semiconductor. It is a discrete semiconductor product that is used in power management applications.

  • Maximum Power Dissipation: 45W
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 15A at 25°C
  • Gate-Source Threshold Voltage: 4V at 250μA
  • Maximum Rds On: 90 mOhm at 15A and 10V
  • Package: TO-251AA
  • Mounting: Through Hole
  • Operating Temperature Range: -55°C to 175°C

This MOSFET is widely used in power management applications and has a medium popularity in the open market.

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