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MRF6V12500HR5

Part No MRF6V12500HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 110V 1.03GHZ NI-780H
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr NXP
Package Tape & Reel
Product Status Active
Technology LDMOS
Frequency 1.03GHz
Gain 19.7dB
Voltage - Test 50 V
Current - Test 200 mA
Power - Output 500W
Voltage - Rated 110 V
Mounting Type Chassis Mount
Package / Case SOT-957A
Supplier Device Package NI-780H-2L
Base Product Number MRF6V12500
Standard Package 50 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 644207-MRF6V12500HR5
Ultra Librarian 3D Model Ultra Librarian MRF6V12500HR5 CAD Model

Description

Product Overview: MRF6V12500HR5 by NXP

The MRF6V12500HR5 is a high-performance, rugged LDMOS transistor designed by NXP Semiconductors, a leader in the field of high-frequency, high-power transistors. This device is specifically engineered for broadcast applications, particularly those operating in the VHF frequency range (30 MHz to 300 MHz). It is well-suited for high-power industrial, scientific, and medical (ISM) applications, as well as for radio and VHF TV broadcast transmitters.

Key Features

  • Frequency Range: This device operates efficiently over a broad frequency range from 30 MHz to 300 MHz, making it versatile for various applications.
  • Output Power: The MRF6V12500HR5 is capable of delivering a high output power of 1250 Watts, ensuring strong signal transmission for broadcast applications.
  • High Gain: It offers a high gain of 26 dB, which translates to excellent signal amplification and contributes to its overall efficiency.
  • Efficiency: With an enhanced efficiency of up to 70%, this transistor ensures reduced operational costs and a lower thermal footprint.
  • Integrated ESD Protection: The device features integrated ESD protection, safeguarding it against electrostatic discharges and enhancing its reliability and longevity.
  • Thermally Enhanced Package: The MRF6V12500HR5 comes in a thermally enhanced package that facilitates better heat dissipation, crucial for maintaining performance and durability under high-power operation.

Applications

The versatility and power of the MRF6V12500HR5 make it suitable for a wide range of applications, including:

  • VHF TV broadcast transmitters
  • Industrial, scientific, and medical (ISM) applications
  • Radio broadcast transmitters
  • Large-scale RF heating
  • Particle accelerators

Conclusion

With its robust design, high power, and efficiency, the MRF6V12500HR5 from NXP stands out as a superior choice for professionals seeking reliability and performance in their broadcast or industrial applications. NXP's commitment to quality and innovation is evident in this transistor's advanced features and capabilities, making it a valuable component in any high-power RF system.

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