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MRF7S38010HR5

Part No MRF7S38010HR5
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 3.6GHZ NI-400  /  RF Mosfet LDMOS 30 V 160 mA 3.4GHz ~ 3.6GHz 15dB 2W NI-400-240
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS
Frequency 3.4GHz ~ 3.6GHz
Gain 15dB
Voltage - Test 30 V
Current - Test 160 mA
Power - Output 2W
Voltage - Rated 65 V
Package / Case NI-400-240
Supplier Device Package NI-400-240
Base Product Number MRF7
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Standard Package 50
Win Source Part Number 1227403-MRF7S38010HR5
Ultra Librarian 3D Model Ultra Librarian MRF7S38010HR5 CAD Model

Description

Introducing the MRF7S38010HR5 RF Power Transistor by NXP

The MRF7S38010HR5 is a high-performance RF power transistor designed by NXP Semiconductors, a leader in the field of high-frequency power solutions. This cutting-edge component is specifically engineered to meet the demanding requirements of modern wireless communications systems. It offers a compact and efficient solution for applications in the 2.4-2.5 GHz frequency range, making it an ideal choice for broadband commercial and industrial uses, including WiMAX, WiFi, and other RF energy applications.

The MRF7S38010HR5 boasts an impressive output power of 10 W, ensuring robust signal amplification for clear and reliable communications. Its high gain, which is typically 16 dB, allows for efficient signal processing, reducing the overall power requirement for the system. This, coupled with its high efficiency of 28%, means that the device operates with less energy waste, translating to cost savings and a reduced environmental impact over time.

Constructed with NXP's advanced LDMOS technology, the MRF7S38010HR5 is housed in a ceramic, high-temperature, surface-mount package designed for optimal thermal performance. This technology ensures that the device can withstand the thermal challenges of high-power operation without compromising on performance or longevity. The package is also optimized for excellent RF performance, ensuring minimal signal distortion and maximum output.

One of the key features of the MRF7S38010HR5 is its integrated ESD protection, which safeguards the device against unexpected electrostatic discharges, enhancing its reliability and durability in harsh operating environments. Moreover, the transistor is characterized by a broad frequency bandwidth, which provides flexibility in design and application, allowing it to be used in a variety of communication systems without the need for significant alterations or additional components.

Overall, the MRF7S38010HR5 from NXP stands out as a superior RF power transistor, offering a blend of power, efficiency, and reliability. Its robust construction and advanced technological features make it an excellent choice for designers looking to enhance the performance and longevity of their wireless communication systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $82.5802 $82.5802
2+ $67.7581 $135.5162
3+ $65.6407 $196.9221
4+ $63.5232 $254.0928
5+ $61.4058 $307.0290
7+ $55.0535 $385.3745
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
Order Increment : 1 pcs
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