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MRF8HP21080HSR3

Part No MRF8HP21080HSR3
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.17GHZ NI780S-4 / RF Mosfet LDMOS (Dual) 28 V 150 mA 2.17GHz 14.4dB 16W NI-780S-4L
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Manufacturer NXP USA Inc.
Packaging Reel - TR
Product Status Obsolete
Transistor Type LDMOS (Dual)
Frequency 2.17GHz
Gain 14.4dB
Voltage - Test 28 V
Current - Test 150 mA
Power - Output 16W
Voltage - Rated 65 V
Case / Package NI-780S-4L
Supplier Device Package NI-780S-4L
Base Product Number MRF8
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 935324468128
Standard Package 250
Win Source Part Number 1323898-MRF8HP21080HSR3
Ultra Librarian 3D Model Ultra Librarian MRF8HP21080HSR3 CAD Model

Description

The NXP MRF8HP21080HSR3 is a high-performance RF power LDMOS transistor designed for a broad range of applications, including cellular base station transmitters, RF energy, and industrial, scientific, and medical (ISM) applications. This device is part of NXP's renowned MRF series, which is recognized for its reliability and efficiency in high-power RF amplification.

Key Features

  • Frequency Range: The MRF8HP21080HSR3 operates within the 2,100 to 2,200 MHz frequency range, making it suitable for various high-frequency applications.
  • High Output Power: With a typical P1dB (output power at 1 dB gain compression) of 80 W, this transistor can handle significant power levels, crucial for applications requiring a strong signal.
  • High Gain: It offers a high gain of 17 dB, ensuring that signals are amplified significantly as they pass through the transistor.
  • High Efficiency: The device provides an excellent drain efficiency of 32%, which contributes to reduced energy consumption and heat generation, enhancing the overall system reliability.
  • Integrated ESD Protection: Built-in electrostatic discharge (ESD) protection helps to safeguard the transistor against sudden voltage spikes, increasing its durability and lifespan.

Applications

The MRF8HP21080HSR3 is versatile and can be used in a variety of applications. Its primary use is in RF power amplifiers for cellular base station transmitters, where it helps to boost the signal strength before transmission. Additionally, it is suitable for use in RF energy applications, such as plasma generation, cooking, and heating. The device is also applicable in the ISM band for industrial heating, welding, and medical diagnostics and treatment equipment.

Package and Quality

This RF power LDMOS transistor comes in a robust over-molded plastic package that ensures protection against environmental factors and mechanical stress. NXP's commitment to quality means that the MRF8HP21080HSR3 is manufactured to meet high standards, ensuring consistent performance and reliability in demanding applications.

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