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MRF9045LR1

Part No MRF9045LR1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 65V 945MHZ NI-360  /  RF Mosfet LDMOS 28 V 350 mA 945MHz 18.8dB 45W NI-360
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Mfr NXP USA Inc.
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type LDMOS
Frequency 945MHz
Gain 18.8dB
Voltage - Test 28 V
Current - Test 350 mA
Power - Output 45W
Voltage - Rated 65 V
Package / Case NI-360
Supplier Device Package NI-360
Base Product Number MRF90
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 500
Win Source Part Number 1024800-MRF9045LR1
Ultra Librarian 3D Model Ultra Librarian MRF9045LR1 CAD Model

Description

Product Overview: MRF9045LR1 - NXP Semiconductor

The MRF9045LR1 is a high-performance RF power transistor from NXP Semiconductors, designed to deliver superior efficiency and reliability for a variety of RF energy applications. This device is part of NXP's renowned RF power LDMOS transistor family and is specifically engineered to meet the stringent requirements of base station applications in the 900 MHz frequency range.

Key Features

  • Frequency Range: The MRF9045LR1 is optimized for 920-960 MHz applications, making it an ideal choice for GSM and CDMA base stations, as well as for RF energy and industrial, scientific, and medical (ISM) applications.
  • Output Power: It boasts a high output power of 45 Watts CW, ensuring robust and consistent performance for high-power applications.
  • Gain: With a high gain of 18 dB, this transistor provides excellent signal amplification, contributing to overall system efficiency.
  • Efficiency: The MRF9045LR1 offers a high efficiency of 45%, which minimizes power loss and reduces the thermal load, leading to longer component life and lower operating costs.
  • Integrated ESD Protection: Electrostatic discharge protection is built-in, enhancing the durability and longevity of the device by safeguarding it against unexpected voltage spikes.
  • Thermally Enhanced Package: It comes in a thermally efficient package that aids in heat dissipation, allowing for stable operation even under high-stress conditions.

Applications

  • Base station applications for GSM, CDMA, and LTE networks
  • RF energy applications including plasma generation, industrial heating, and medical diagnostics
  • ISM band applications
  • Broadband communications systems

The MRF9045LR1 from NXP Semiconductors is a testament to NXP's commitment to providing cutting-edge RF power solutions. Its combination of high performance, efficiency, and reliability makes it a preferred choice for manufacturers and engineers looking to enhance their RF designs. Whether it's for telecommunications infrastructure or advanced industrial applications, the MRF9045LR1 is a robust and versatile component that delivers consistent, high-quality results.

For detailed specifications, application notes, and support documentation, customers are encouraged to visit the official NXP Semiconductors website or contact their sales and technical support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $57.7176 $115.4352
3+ $47.3580 $142.0740
4+ $45.8780 $183.5120
6+ $44.3981 $266.3886
7+ $42.9182 $300.4274
10+ $38.4784 $384.7840
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Availability: 5,750 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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