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PBSS9110D,115

Part No PBSS9110D,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single
Description TRANS PNP 100V 1A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 320mV @ 100mA, 1A
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 150 @ 500mA, 5V
Maximum Power Dissipation 700mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 061153-PBSS9110D,115
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PBSS9110D,115 CAD Model

Description

Introducing the PBSS9110D,115 NPN Transistor by NXP Semiconductors

Discover the power and efficiency of the PBSS9110D,115, a high-performance NPN transistor crafted by the renowned NXP Semiconductors. This discrete semiconductor product is designed to meet the rigorous demands of modern electronic circuitry, delivering exceptional performance in a compact package.

Product Features

  • Type: NPN Bipolar Transistor
  • Package: SOT-163 (SC-73)
  • Collector-Emitter Voltage (Vceo): 100V
  • Collector Current (Ic): 1A
  • Power Dissipation (Pd): 1.25W
  • DC Current Gain (hFE): 100 at 150 mA
  • Transition Frequency (fT): 140MHz
  • Operating Temperature Range: -65°C to +150°C

Designed for high voltage applications, the PBSS9110D,115 transistor is a versatile component suitable for a wide range of electronic circuits. It offers a collector-emitter voltage of 100V, which makes it ideal for operations that require a substantial voltage handling capability. With a collector current of 1A, this transistor can manage significant current flow, making it suitable for power management and amplification tasks.

The PBSS9110D,115 also boasts a power dissipation of 1.25W, enabling it to sustain moderate power levels without overheating. Its high DC current gain ensures efficient current amplification, while the transition frequency of 140MHz allows for operation in high-speed switching applications, such as switching regulators, inverters, and amplifiers.

The robustness of the PBSS9110D,115 is further emphasized by its wide operating temperature range, ensuring reliable performance under extreme environmental conditions. This feature makes it an ideal choice for industrial and automotive applications where temperature fluctuations are common.

Encased in a SOT-163 (SC-73) package, the PBSS9110D,115 is not only powerful but also space-efficient, allowing for integration into compact circuit designs without sacrificing performance. NXP's commitment to quality ensures that this transistor delivers consistent and reliable operation, making it a preferred choice for engineers and designers looking for a high-voltage NPN solution.

Whether you're designing power supplies, motor controllers, or any other application that requires a robust NPN transistor, the PBSS9110D,115 from NXP Semiconductors is an excellent choice that combines performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $35.8004 $71.6008
4+ $29.3740 $117.4960
7+ $28.4569 $199.1983
9+ $27.5387 $247.8483
11+ $26.6204 $292.8244
15+ $23.8669 $358.0035
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Availability: 1,600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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