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PDTC115EK

Part No PDTC115EK
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 250MW SMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 100k
Resistor - Emitter Base (R2) (Ohms) 100k
Typical Gain (hFE) (Min) 80 @ 5mA, 5V
Max Vce (sat) 150mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SMT3; MPAK
Win Source Part Number 061359-PDTC115EK
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PDTC115EK CAD Model

Description

The PDTC115EK is a robust, high-performance digital transistor from NXP Semiconductors, a global leader in the design and manufacturing of semiconductor solutions. This product is specifically engineered to provide designers with an efficient and compact solution for driving medium-power applications.

Key Features

  • Integrated Resistor Network: The PDTC115EK comes with a built-in bias resistor network, which simplifies circuit design by reducing component count and saving valuable PCB space. This integration also enhances the reliability of the overall design by minimizing the number of external connections.
  • High Current Gain: With a high current gain (hFE), this digital transistor can amplify a small input signal into a larger output, making it ideal for switching and amplification applications.
  • Low Voltage Operation: The device is designed to operate effectively at low voltages, which is particularly beneficial for battery-powered devices and portable electronics, where power efficiency is critical.
  • Surface-Mount Package: The PDTC115EK is available in a small SOT23 plastic surface-mount package, which is well-suited for automated assembly processes and helps to reduce the overall footprint of the electronic circuits.

Applications

The PDTC115EK is versatile and can be used in a wide range of applications. It is particularly suitable for:

  • Switching loads in portable devices
  • Power management functions
  • DC-DC converters
  • Signal processing
  • Motor control circuits

Technical Specifications

Some of the key technical specifications of the PDTC115EK include:

  • Collector-Emitter Voltage (VCEO): 50V
  • Collector Current (IC): 100mA
  • Power Dissipation (Ptot): 250mW
  • DC Current Gain (hFE): 100 min
  • Operating Temperature Range: -55°C to +150°C

With its integrated resistors, low voltage operation, and compact form factor, the PDTC115EK from NXP is an excellent choice for designers looking to optimize their circuit designs for efficiency and reliability. Its ability to support a broad spectrum of applications makes it a valuable component in the semiconductor industry.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,855+ $0.0312 $57.8760
4,505+ $0.0256 $115.3280
6,980+ $0.0249 $173.8020
9,620+ $0.0240 $230.8800
12,440+ $0.0233 $289.8520
16,670+ $0.0208 $346.7360
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 1855 pcs
Order Increment : 1 pcs
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