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PEMD9,115

Part No PEMD9,115
Manufacturer NXP / Nexperia
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS NPN/PNP SOT666
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Transistor Polarity 1 NPN, 1 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 100 @ 5mA, 5V
Max Vce (sat) 100mV @ 250μA, 5mA
Collector Cut-off Current(Max) 1μA
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SOT-666
Win Source Part Number 099366-PEMD9,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PEMD9,115 CAD Model

Description

The PEMD9,115 by NXP Semiconductors is a state-of-the-art, high-performance switching diode specifically designed to meet the needs of modern electronic applications. This diode is part of NXP's extensive line of semiconductor products known for their reliability and efficiency.

Key Features

  • High-Speed Switching: The PEMD9,115 offers fast switching speeds, making it ideal for high-frequency applications.
  • Dual Diode Configuration: This product comes in a convenient dual diode common anode configuration, which allows for flexibility in circuit designs and can save space on printed circuit boards (PCBs).
  • Low Capacitance: The low diode capacitance is beneficial for high-speed signal processing, ensuring minimal signal distortion and better performance in RF applications.
  • Low Leakage Current: The diode has a very low reverse leakage current, enhancing the overall efficiency of the device and reducing power loss.
  • Surface-Mount Package: The SOT-23 package is compact and suitable for automated assembly processes, which is critical for mass production.

Applications

The PEMD9,115 is versatile and can be used in a variety of applications, including:

  • High-speed switching circuits
  • Logic level conversion
  • Line termination
  • Voltage clamping
  • Protection circuits

Specifications

Parameter Value Package SOT-23 Configuration Dual Diode, Common Anode Maximum Repetitive Reverse Voltage 100 V Continuous Forward Current 100 mA Power Dissipation 250 mW

Quality and Reliability

NXP Semiconductors is committed to delivering products of the highest quality. The PEMD9,115 is manufactured with stringent quality control processes and is designed to meet the rigorous demands of the electronics industry. With its superior performance and reliability, the PEMD9,115 is an excellent choice for designers looking for a high-quality switching diode solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4428 $50.9220
245+ $0.4143 $101.5035
375+ $0.4000 $150.0000
540+ $0.3714 $200.5560
705+ $0.3571 $251.7555
875+ $0.3429 $300.0375
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,680 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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