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PH1825AL,115

Part No PH1825AL,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 100A LFPAK56 / N-Channel 25 V 100A (Tc) 104W (Tc) Surface Mount LFPAK56, Power-SO8
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 12 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package LFPAK56, Power-SO8
Package / Case SC-100, SOT-669
Base Product Number PH18
Standard Package 1,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1346409-PH1825AL,115
Ultra Librarian 3D Model Ultra Librarian PH1825AL,115 CAD Model

Description

The PH1825AL,115 is a cutting-edge, high-performance MOSFET transistor designed and manufactured by NXP Semiconductors. This component is well-suited for a variety of applications that demand efficient power management and high-speed switching capabilities. The PH1825AL,115 is an integral part of power conversion systems and is commonly used in computing, automotive, and industrial sectors.

Key Features

  • Low On-State Resistance: The MOSFET features a low on-state resistance (RDS(on)), which enhances its efficiency by minimizing power losses during operation.
  • High-Speed Switching: Designed for high-speed switching, the PH1825AL,115 ensures quick response times in circuits where timing is critical.
  • High Current Capacity: With the ability to handle a substantial current load, this MOSFET can be used in high-power applications without compromising performance.
  • Robust Thermal Performance: The device's package is designed to offer excellent thermal performance, ensuring reliability even under high temperature operating conditions.
  • Logic Level Gate Drive: The MOSFET can be driven by logic-level voltages, making it compatible with a wide range of control circuits and easier to integrate into various designs.

Applications

The versatility of the PH1825AL,115 makes it an excellent choice for numerous applications. It is particularly well-suited for:

  • DC/DC converters
  • Power management systems
  • Motor drives
  • Switching regulators
  • Automotive electronics
  • LED lighting solutions

Specifications

Parameter Value
Drain-Source Voltage (VDS) 25 V
Continuous Drain Current (ID) 182 A
Power Dissipation (PD) 156 W
Operating Temperature Range -55°C to +175°C
Package LFPAK56

The PH1825AL,115 from NXP Semiconductors is a robust and reliable component that brings efficiency and performance to the next level. Its superior design and specifications make it a go-to choice for engineers and designers looking to create sophisticated electronic systems.

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