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PHB47NQ10T

Part No PHB47NQ10T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel enhancement mode field-effect transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1237238-PHB47NQ10T
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PHB47NQ10T CAD Model

Description

NXP PHB47NQ10T MOSFET Overview

The NXP PHB47NQ10T is a state-of-the-art power MOSFET designed for high-efficiency power conversion and switching applications. This MOSFET is part of NXP's TrenchMOS™ portfolio, which is renowned for its low on-state resistance and minimal switching losses. The PHB47NQ10T is a testament to NXP's commitment to providing innovative solutions for power management challenges across various industries.

Key Features

  • Low Threshold Voltage: The device operates at a low gate threshold voltage, ensuring that it can be driven at lower voltages, making it suitable for low-voltage applications.
  • High Efficiency: With its low on-state resistance (R<sub>DS(on)), the PHB47NQ10T minimizes conduction losses, thereby increasing the overall efficiency of the system in which it is used.
  • High-Speed Switching: The MOSFET is designed for fast switching applications, which is critical for reducing switching losses and improving performance in power converters and inverters.
  • Robust Thermal Performance: The package design and material choices allow for excellent thermal dissipation, ensuring the device operates reliably even under high power and temperature conditions.

Applications

The PHB47NQ10T is versatile and can be used in a wide array of applications, including:

  • DC/DC converters
  • Switch Mode Power Supplies (SMPS)
  • Motor control circuits
  • Power management systems
  • Automotive applications
  • High-performance computing

Product Specifications

The PHB47NQ10T boasts impressive specifications that make it a robust choice for power management:

  • Drain-Source Voltage (V<sub>DS): 100V
  • Continuous Drain Current (I<sub>D): 47A
  • Power Dissipation (P<sub>D): 130W
  • Operating Temperature Range: -55°C to +175°C

Quality and Reliability

NXP's PHB47NQ10T is designed with a focus on quality and reliability. It is manufactured to meet the highest industry standards, ensuring long-term reliability and performance in critical applications. This MOSFET is a reliable choice for designers looking to optimize their power management solutions with a product that delivers both efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8208 $52.3872
21+ $4.7761 $100.2981
33+ $4.6268 $152.6844
45+ $4.4776 $201.4920
58+ $4.3283 $251.0414
78+ $3.8806 $302.6868
!
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Availability: 2,374 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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