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PHD23NQ10T

Part No PHD23NQ10T
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 23A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 1187pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 042102-PHD23NQ10T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD23NQ10T CAD Model

Description

The NXP PHD23NQ10T is a cutting-edge power MOSFET designed for high-performance applications requiring efficient power management and conversion. This robust semiconductor device is a testament to NXP's commitment to providing innovative and reliable components for the electronics industry.

Key Features

  • Low On-Resistance: The PHD23NQ10T boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Switching Speed: With its fast switching capabilities, the device is well-suited for high-frequency operations, making it ideal for switching power supplies and DC-DC converters.
  • Enhanced Thermal Performance: The MOSFET is encapsulated in a compact, surface-mount package that enhances heat dissipation, ensuring stable performance even under high temperature conditions.
  • Logic-Level Compatibility: It can be directly driven by logic-level voltages, simplifying the design of control circuits and reducing the need for additional driver components.

Applications

The PHD23NQ10T is versatile and can be used in a wide range of applications, including:

  • Power management modules
  • DC-DC converters
  • Motor control systems
  • LED lighting solutions
  • Battery management systems
  • Automotive electronics

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 100V Continuous Drain Current (I<sub>D) 23A Power Dissipation (P<sub>D) 45W Operating Temperature Range -55°C to +175°C Package SOT-223

Conclusion

The NXP PHD23NQ10T MOSFET is a reliable and efficient solution for designers looking to enhance their power management systems. With its advanced features and robust performance, it stands out as a smart choice for a multitude of electronic applications.

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