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PHD45N03LT

Part No PHD45N03LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 40A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 19nC @ 5V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 042103-PHD45N03LT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD45N03LT CAD Model

Description

The NXP PHD45N03LT is a state-of-the-art, high-performance TrenchMOS™ transistor designed to deliver exceptional efficiency and power control in a variety of applications. This N-channel, logic level MOSFET is a testament to NXP's commitment to providing innovative solutions that meet the demands of modern electronic designs.

Key Features

  • Low Threshold Voltage: The device operates at a low threshold voltage, making it compatible with logic-level drive circuits and ensuring easy interfacing with microcontrollers and other digital circuits.
  • High-Speed Switching: With its fast switching capabilities, the PHD45N03LT is ideal for high-frequency applications, providing efficient performance with reduced switching losses.
  • Low On-Resistance (RDS(on)): The transistor offers a very low on-resistance, which minimizes conduction losses and improves overall efficiency, especially in high-current applications.
  • High Power Dissipation: With an ability to handle a significant amount of power, this MOSFET can be used in applications that require robust power handling capabilities.
  • Enhanced Durability: The device is encapsulated in a rugged SOT-223 package, which not only provides excellent thermal performance but also ensures mechanical robustness for a wide range of operating conditions.

Applications

The versatility of the PHD45N03LT allows it to be utilized in a broad spectrum of applications, including but not limited to:

  • DC/DC converters
  • Motor control circuits
  • Power management systems
  • Automotive applications
  • Switching regulators
  • Load switches

Quality and Reliability

NXP's PHD45N03LT is built to the highest quality standards, ensuring reliable performance even under stringent conditions. The device is designed to meet the rigorous requirements of the automotive industry, making it a suitable choice for applications that demand the highest level of reliability and longevity.

Technical Specifications

Before integrating the PHD45N03LT into your design, please consult the detailed technical specifications available in the datasheet provided by NXP. This will ensure that the device meets your application's specific requirements and operates within the recommended parameters.

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