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PHD63NQ03LT

Part No PHD63NQ03LT
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 68.9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 68.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.6nC @ 5V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 111W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209901-PHD63NQ03LT
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHD63NQ03LT CAD Model

Description

Introducing the PHD63NQ03LT MOSFET from NXP Semiconductors

The PHD63NQ03LT is a state-of-the-art N-channel TrenchMOS™ standard level field-effect transistor designed and manufactured by NXP Semiconductors. This high-performance component is engineered to deliver exceptional efficiency and power handling capabilities, making it an ideal choice for a wide range of applications in modern electronics.

With its low threshold voltage and high-speed switching capabilities, the PHD63NQ03LT is particularly suited for use in power management circuits, DC-DC converters, motor drives, and other applications that demand high efficiency and reliability. Its TrenchMOS technology ensures a minimal on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall performance.

The device comes in a robust and compact SOT428 (D-PAK) package, which not only saves valuable board space but also offers excellent thermal performance. This packaging, combined with the MOSFET's inherent low gate charge (Q<sub>g), allows for efficient heat dissipation and stable operation even under high switching frequencies or heavy loads.

Key Features of the PHD63NQ03LT:

  • Low On-State Resistance: Features a low R<sub>DS(on) for increased efficiency and reduced power losses in the circuit.
  • High-Speed Switching: Offers fast switching speeds, enabling high-frequency operation in power conversion applications.
  • High Continuous Drain Current: Capable of handling a continuous drain current (I<sub>D), making it suitable for high-power applications.
  • Robust Thermal Management: The SOT428 (D-PAK) package is designed to handle high thermal loads, ensuring reliability and longevity.
  • Standard Level Gate Drive: Compatible with standard level gate drive voltages, allowing for easy integration into existing designs without the need for additional circuitry.

The PHD63NQ03LT MOSFET from NXP is a testament to the company's commitment to providing innovative semiconductor solutions that meet the demands of modern electronic systems. Whether you're designing power supplies, motor controllers, or any application requiring efficient power handling, the PHD63NQ03LT is a component that promises to deliver performance, efficiency, and reliability.

Choose the PHD63NQ03LT for your next project and experience the difference that NXP's advanced TrenchMOS technology can make in your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8293 $64.9758
13+ $8.8854 $115.5102
21+ $8.6082 $180.7722
28+ $8.3299 $233.2372
36+ $8.0527 $289.8972
48+ $7.2199 $346.5552
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Availability: 3,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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