2SA1774T1G PNP Transistor by ON Semiconductor

The 2SA1774T1G is a high-performance PNP bipolar transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is designed to meet the needs of a wide range of electronic applications, offering reliability and efficiency in a compact SOT-23 package.

Key Features

• Type: PNP Bipolar Transistor
• Package: SOT-23
• Collector-Emitter Voltage (V<sub>CEO): -50V
• Collector Current (I<sub>C): -150mA
• Power Dissipation (P<sub>D): 150mW
• DC Current Gain (h<sub>FE): 120 to 560 at I<sub>C = -10mA
• Operating and Storage Junction Temperature Range: -55°C to +150°C

The 2SA1774T1G transistor is designed for general-purpose amplifier and switching applications. It features a collector-emitter voltage of -50V and a collector current of -150mA, making it suitable for a variety of low to medium power applications. The transistor is capable of power dissipation up to 150mW, which allows for sufficient heat dissipation during operation.

This PNP transistor offers a high DC current gain, ranging from 120 to 560 at a collector current of -10mA. This gain range ensures that the device can be optimized for the required amplification in different circuit configurations. Its high gain-bandwidth product also enables efficient operation at high switching speeds, making the 2SA1774T1G ideal for high-frequency applications.

Constructed with ON Semiconductor's innovative technologies, the 2SA1774T1G is designed to offer exceptional performance stability and energy efficiency. Its small SOT-23 package is well-suited for space-constrained applications and simplifies the PCB design process. The device also has a wide operating and storage temperature range from -55°C to +150°C, ensuring reliability across various environmental conditions.

ON Semiconductor's commitment to quality makes the 2SA1774T1G a trustworthy choice for designers and engineers looking to enhance their electronic designs with a durable and efficient PNP transistor.