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PHKD6N02

Part No PHKD6N02
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 10.9A SOT96-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 10.9A
Maximum Rds On at Id,Vgs 20 mOhm @ 3A, 5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 15.3nC @ 5V
Max Input Capacitance 950pF @ 10V
Maximum Power Dissipation 4.17W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 045758-PHKD6N02
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHKD6N02 CAD Model

Description

The NXP PHKD6N02LT,115 is a cutting-edge MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. As a product from NXP Semiconductors, a trusted leader in the industry, this MOSFET is engineered to provide outstanding performance and reliability.

This particular component is a part of the TrenchMOS™ series, which is known for its low threshold voltage and low conduction losses. The PHKD6N02LT,115 is a logic level N-channel enhancement mode Field-Effect Transistor that uses TrenchMOS technology. This technology allows for very low on-state resistance (R<sub>DS(on)) and reduced switching losses, making it an excellent choice for high-efficiency power conversion in modern electronic circuits.

With its compact SOT-428 (D-PAK) package, the PHKD6N02LT,115 is suitable for surface mount technology (SMT), which is ideal for space-constrained applications. The device is characterized by a drain-source voltage (V<sub>DS) of 24V, a continuous drain current (I<sub>D) of 24A, and a power dissipation (P<sub>D) of 45W, ensuring its capability to handle significant power for its size.

Additionally, the MOSFET features fast switching performance with a low gate charge (Q<sub>G), which is beneficial for applications requiring high-speed operation. The device also offers protection against overcurrent and thermal overload, enhancing its durability and service life.

The PHKD6N02LT,115 is widely used in a variety of applications, including DC/DC converters, motor control circuits, power management systems, and other power-related functions in consumer electronics, automotive, and industrial sectors. Its robust design and efficient operation make it a reliable component for designers looking to optimize their power circuits for better performance and energy savings.

With its combination of high current capacity, low voltage operation, and energy-efficient design, the NXP PHKD6N02LT,115 MOSFET represents a smart choice for engineers and designers who demand the best in power management technology.

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