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PHP101NQ04T,127

Part No PHP101NQ04T,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A TO220AB  /  N-Channel 40 V 75A (Tc) 157W (Tc) Through Hole TO-220AB
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr NXP USA Inc.
Series TrenchMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 36.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2020 pF @ 25 V
Power Dissipation (Max) 157W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number PHP10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 934058561127,PHP101NQ04T,PHP101NQ04T-ND
Standard Package 50
Win Source Part Number 1084730-PHP101NQ04T,127
Ultra Librarian 3D Model Ultra Librarian PHP101NQ04T,127 CAD Model

Description

The PHP101NQ04T,127 is a state-of-the-art N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors, a global leader in the electronics market. This high-performance MOSFET is engineered to deliver exceptional efficiency and power handling capabilities, making it an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, power management systems, and motor control circuits.

Key Features

  • Low On-Resistance: The device boasts an extremely low on-state resistance (R<sub>DS(on)), which ensures minimal power loss and heat generation during operation, enhancing the overall efficiency of the system it is integrated into.
  • High-Speed Switching: With its fast switching speed, the PHP101NQ04T,127 is capable of operating at high frequencies, which is crucial for applications requiring quick response times and high efficiency.
  • Robust Thermal Performance: This MOSFET is designed with an excellent thermal conduction path, allowing for effective heat dissipation. Its high junction temperature capability ensures reliability under stressful thermal conditions.
  • Enhanced Durability: The component is encapsulated in a TO-220 package, which is known for its durability and mechanical robustness, making it suitable for rugged environments.

Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 40V Continuous Drain Current (I<sub>D) 75A Power Dissipation (P<sub>D) 110W R<sub>DS(on) 8.5 mΩ Package TO-220

Applications

The PHP101NQ04T,127 is versatile and can be used in various high-performance applications. Its reliability and efficiency make it particularly suitable for:

  • Automotive electronics
  • Power supply modules
  • DC/AC inverters
  • Power factor correction circuits
  • Motor drives and controllers

With its combination of low on-resistance, high-speed switching, and robust thermal performance, the PHP101NQ04T,127 from NXP is a premium choice for designers looking to optimize their power management and conversion systems.

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