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PHP112N06T,127

Part No PHP112N06T,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 4352pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1043905-PHP112N06T,127
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PHP112N06T,127 CAD Model

Description

The PHP112N06T,127 is a high-performance MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the field of high-quality electronic components. This product is a testament to NXP's commitment to providing innovative solutions that meet the needs of modern electronic circuits. The PHP112N06T,127 is specifically engineered to deliver outstanding efficiency and reliability for a wide range of applications.

Key Features

  • Type: N-channel, TrenchMOS™ standard level FET
  • Package: Housed in a TO-220AB package, it offers a good balance between performance and size, making it suitable for various applications.
  • Drain-source voltage (V<sub>DS): 55V, providing a robust breakdown voltage for high voltage operations.
  • Continuous drain current (I<sub>D): 110A, ensuring high current handling capability.
  • Power Dissipation (P<sub>D): 214W, allowing for efficient energy handling in high-power systems.
  • RDS(on): Very low on-state resistance of 6.3 mΩ (typical), minimizing power losses and improving efficiency.
  • Operating Temperature: Capable of operating in a wide temperature range from -55°C to +175°C, suitable for challenging environments.
  • Gate charge (Q<sub>G): Low gate charge for faster switching speeds.

Applications

The versatility of the PHP112N06T,127 makes it ideal for a range of applications, particularly where power efficiency and thermal management are crucial. Common uses include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor control systems
  • Power management circuits
  • Automotive applications
  • High-performance computing

Quality and Reliability

NXP's PHP112N06T,127 MOSFET is produced with the highest quality standards, ensuring that each component meets stringent requirements for performance and durability. The device is RoHS compliant, adhering to environmental regulations and promoting sustainability. With its robust construction and proven design, the PHP112N06T,127 is a reliable choice for designers looking to enhance the efficiency and longevity of their electronic systems.

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