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PMBF4392,215

Part No PMBF4392,215
Manufacturer NXP / Nexperia
Catalog JFETs (Junction Field Effect)
Description JFET N-CH 40V 250MW SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Voltage - Breakdown (V(BR)GSS) 40V
Drain-Source Breakdown Voltage 40V
Current - Drain (Idss) @ Vds (Vgs=0) 25mA @ 20V
Voltage - Cutoff (VGS off) @ Id 2V @ 1nA
Max Input Capacitance 14pF @ 20V
Maximum Power Dissipation 250mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23 (TO-236AB)
Win Source Part Number 1089472-PMBF4392,215
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PMBF4392,215 CAD Model

Description

The PMBF4392,215 is a high-performance N-channel JFET (Junction Field-Effect Transistor) designed and manufactured by NXP Semiconductors. This discrete semiconductor product is tailored for demanding applications that require low noise, high input impedance, and low leakage current. It is an ideal choice for analog signal switching and amplification in a variety of electronic devices.

Key Features

  • Low Noise: The PMBF4392,215 boasts excellent low noise performance, making it suitable for audio and instrumentation applications where maintaining signal integrity is crucial.
  • High Input Impedance: With its high input impedance, this JFET ensures minimal loading on the preceding stages, preserving signal strength and quality.
  • Low Leakage Current: The device exhibits low leakage current, which enhances its reliability and performance in sensitive circuits.
  • Fast Switching: The PMBF4392,215 is designed for fast switching speeds, contributing to improved performance in digital and analog switching applications.
  • Surface-Mount Package: It comes in a compact SOT23 package, which is ideal for space-constrained applications and allows for efficient use of PCB real estate.

Applications

The PMBF4392,215 is versatile and can be used in a wide range of applications, including:

  • Audio amplifiers and preamplifiers
  • Analog switches
  • Buffer amplifiers
  • Instrumentation amplifiers
  • Sample and hold circuits
  • Voltage controlled oscillators

Specifications

Parameter Value Drain-Source Voltage (Vds) 30V Gate-Source Voltage (Vgs) -30V Drain Current (Id) 10mA Power Dissipation (Pd) 300mW

With its combination of features, the PMBF4392,215 from NXP is an excellent choice for engineers and designers looking for a reliable and efficient solution for their circuit designs.

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