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PMFPB6532UP,115

Part No PMFPB6532UP,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.5A SOT1118
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 380pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 520mW (Ta), 8.3W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 1A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DFN2020-6
Dimension 6-UDFN Exposed Pad
Win Source Part Number 1089669-PMFPB6532UP,115
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMFPB6532UP,115 CAD Model

Description

Introducing the PMFPB6532UP,115 - A Robust Power MOSFET from NXP

The PMFPB6532UP,115 is a state-of-the-art Power MOSFET designed and manufactured by NXP Semiconductors, a leader in the electronics industry. This high-performance component is engineered to deliver efficient power conversion and management in a wide array of applications. With its compact form factor and exceptional reliability, the PMFPB6532UP,115 is an ideal choice for designers looking to enhance their power systems.

Key Features

  • Low On-Resistance: The device boasts an impressively low on-resistance, which translates to reduced conduction losses and enhanced efficiency in power applications.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can operate at high frequencies without compromising performance, making it suitable for modern high-speed circuit designs.
  • Advanced Packaging: The PMFPB6532UP,115 comes in a compact, surface-mount package, ensuring a minimal footprint on the PCB and enabling high-density board designs.
  • Thermal Management: With excellent thermal characteristics, this MOSFET is capable of handling significant power levels while maintaining stability and reliability.
  • Robustness: The device is designed to withstand harsh operating conditions, providing a robust solution for industrial and automotive applications that demand high reliability.

Applications

The versatility of the PMFPB6532UP,115 makes it suitable for a diverse range of applications, including:

  • DC/DC converters
  • Power supplies for computer systems
  • Motor control circuits
  • Automotive electronics
  • Switching regulators
  • LED lighting systems

Product Specifications

The PMFPB6532UP,115 is built to meet the rigorous demands of modern electronic circuits. It features a continuous drain current (I<sub>D) that ensures it can handle applications requiring a substantial amount of current. The device operates over a wide temperature range, ensuring performance is maintained even under extreme conditions.

With its combination of efficiency, speed, and robustness, the PMFPB6532UP,115 from NXP Semiconductors is an excellent choice for engineers and designers looking to create reliable, high-performance power management systems.

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