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PMGD130UN,115

Part No PMGD130UN,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.2A 6TSSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.2A
Maximum Rds On at Id,Vgs 145 mOhm @ 1.2A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 1.3nC @ 4.5V
Max Input Capacitance 83pF @ 10V
Maximum Power Dissipation 390mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSSOP
Win Source Part Number 1089673-PMGD130UN,115
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian PMGD130UN,115 CAD Model

Description

The PMGD130UN,115 is a cutting-edge, high-performance MOSFET transistor designed and manufactured by NXP Semiconductors, a renowned leader in the semiconductor industry. This product is part of NXP's extensive portfolio of metal-oxide-semiconductor field-effect transistors (MOSFETs) that are engineered to deliver efficient power management and signal amplification in a multitude of electronic applications.

Key Features

  • Device Type: MOSFET
  • Channel Type: N-Channel
  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 3.1A
  • R<sub>DS(on): Low on-state resistance for higher efficiency
  • Package: 6-TSSOP, SC-88, SOT-363
  • Mounting Type: Surface Mount
  • Qualification: AEC-Q101 qualified for automotive applications

Applications

The PMGD130UN,115 is ideally suited for a wide range of applications, including but not limited to:

  • Load switch
  • Battery management systems
  • Power management circuits
  • Motor control modules
  • Automotive systems and subsystems
  • DC-DC converters
  • Portable and wearable devices

Performance and Quality

NXP Semiconductors ensures that the PMGD130UN,115 MOSFET meets the highest standards of performance and reliability. With its low on-resistance and high current capability, this MOSFET provides efficient power handling and switching speeds. It is also designed to withstand harsh automotive environments, as evidenced by its AEC-Q101 qualification, which attests to its robustness and durability in automotive-grade applications.

Environmental and Regulatory Compliance

The PMGD130UN,115 is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is manufactured with a commitment to environmental responsibility. This compliance indicates that the product is free from specific hazardous materials, making it safer for both consumers and the environment.

Ordering and Packaging

When ordering the PMGD130UN,115, it is important to refer to the part number "115" which denotes the specific packaging configuration. The device is supplied in reel packaging, which facilitates efficient assembly during the manufacturing process, especially for high-volume production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,890 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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