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PMN27UN,135

Part No PMN27UN,135
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5.7A 6TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 700mV @ 1mA
Max Gate Charge 10.6nC @ 4.5V
Max Input Capacitance 740pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.75W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SC-74, SOT-457
Win Source Part Number 004403-PMN27UN,135
Popularity Medium
Supply and Demand Status Balance
Quantity per package 10k pcs
Ultra Librarian 3D Model Ultra Librarian PMN27UN,135 CAD Model

Description

The PMN27UN,135 is a cutting-edge MOSFET transistor designed and manufactured by NXP Semiconductors, a leader in the semiconductor industry. This product is part of NXP's extensive portfolio of high-performance transistors that are engineered to meet a wide range of application requirements.

Key Features

  • High Efficiency: The PMN27UN,135 boasts a low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • Thermal Performance: With its optimized thermal design, this MOSFET is capable of operating at higher currents and voltages without overheating, making it suitable for power-intensive applications.
  • Compact Footprint: The device comes in a small SOT-23 package, which is ideal for space-constrained applications where board real estate is at a premium.
  • Durability: Built to withstand harsh conditions, the PMN27UN,135 is characterized by its robustness and long-term reliability, ensuring a prolonged lifespan even in demanding environments.

Applications

The PMN27UN,135 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Load Switches
  • Battery Management Systems

Technical Specifications

Some of the technical specifications of the PMN27UN,135 include:

  • Drain-source voltage (V<sub>DS): Up to 20V
  • Continuous drain current (I<sub>D): Up to 1.1A
  • Power dissipation (P<sub>D): 300mW
  • On-state resistance (R<sub>DS(on)): As low as 300mΩ

Quality and Environmental Compliance

NXP Semiconductors is committed to delivering high-quality products that comply with international environmental standards. The PMN27UN,135 is no exception, adhering to RoHS directives and other environmental regulations, ensuring minimal ecological impact.

In summary, the PMN27UN,135 from NXP Semiconductors is a high-performance, durable, and efficient MOSFET that is suitable for a variety of electronic applications. Its compact size, combined with its robust performance, makes it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $3.0648 $52.1016
40+ $2.5148 $100.5920
62+ $2.4362 $151.0444
85+ $2.3576 $200.3960
110+ $2.2790 $250.6900
147+ $2.0432 $300.3504
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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