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PMPB15XP

Part No PMPB15XP
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 12V 8.2A 6-Pin DFN-MD EP / MOSFET P-CH 12V 8.2A 6DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 100nC @ 4.5V
Max Input Capacitance 2875pF @ 6V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Maximum Rds On at Id,Vgs 19 mOhm @ 8.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-DFN2020MD (2x2)
Dimension 6-UDFN Exposed Pad
Win Source Part Number 279173-PMPB15XP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name PMPB15XP
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian PMPB15XP CAD Model

Description

The NXP PMPB15XP is a state-of-the-art MOSFET designed for high-efficiency power management applications. This advanced semiconductor device is engineered to deliver superior switching performance and energy efficiency, making it an ideal choice for a wide range of electronic applications.

Utilizing NXP's cutting-edge technology, the PMPB15XP features low on-state resistance (RDS(on)), which significantly reduces conduction losses. This characteristic is essential for applications requiring high current handling with minimal power dissipation. With its compact Power-SO8 package, the PMPB15XP offers an excellent thermal performance, ensuring reliability even under high temperature operating conditions.

The PMPB15XP is designed to operate at a maximum continuous drain current (ID) of 100 A, with a drain-source voltage (VDS) of 30 V. This robust MOSFET is capable of handling high pulsed current loads, which is crucial for applications that demand quick bursts of power. Its fast switching capabilities are attributed to its low input capacitance (Ciss), which enables rapid charge and discharge cycles, improving the overall efficiency of the power conversion process.

This MOSFET is also characterized by its low gate charge (Qg), which reduces the amount of energy needed to turn the device on and off. This feature is particularly beneficial in reducing switching losses in high-frequency power supplies, motor control circuits, and DC-DC converters. Additionally, the PMPB15XP is equipped with an integrated diode, which provides fast body diode recovery time, further enhancing its performance in synchronous rectification applications.

The PMPB15XP is not only powerful but also designed with protection features in mind. It includes built-in electrostatic discharge (ESD) protection, safeguarding the device from unexpected voltage spikes during handling and operation. This MOSFET is RoHS compliant, adhering to environmental standards and ensuring a reduced environmental impact.

In summary, the NXP PMPB15XP MOSFET is an exceptional choice for designers seeking a high-performance, efficient, and reliable power management solution. Its outstanding electrical characteristics and thermal properties make it suitable for a diverse range of applications, from computing and networking to industrial and automotive systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
355+ $0.1426 $50.6230
750+ $0.1336 $100.2000
1,165+ $0.1291 $150.4015
1,670+ $0.1200 $200.4000
2,165+ $0.1155 $250.0575
2,705+ $0.1110 $300.2550
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 102,000 pieces
MOQ: 355 pcs
Order Increment : 1 pcs
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