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PMR290UNE,115

Part No PMR290UNE,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 700MA SC-75
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 950mV @ 250μA
Max Gate Charge 0.68nC @ 4.5V
Max Input Capacitance 83pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 250mW (Ta), 770mW (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 500mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-75
Dimension SC-75, SOT-416
Win Source Part Number 1089746-PMR290UNE,115
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMR290UNE,115 CAD Model

Description

The PMR290UNE,115 is a high-performance, energy-efficient N-channel TrenchMOS™ transistor designed and manufactured by NXP Semiconductors. This field-effect transistor (FET) is a part of NXP's extensive portfolio of MOSFETs that offer a blend of low on-state resistance and high switching speeds, making them ideal for a wide range of power management applications.

Key Features

  • Low On-Resistance: The PMR290UNE,115 boasts an extremely low on-state resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power loss during operation.
  • High-Speed Switching: Designed for fast switching, this MOSFET enables high-frequency operation, which is beneficial for reducing the size of passive components and improving overall system performance.
  • Advanced TrenchMOS™ Technology: Utilizing NXP's cutting-edge TrenchMOS™ technology, the PMR290UNE,115 offers superior performance in terms of gate charge and capacitance, contributing to its high efficiency and reduced switching losses.
  • Small Footprint: The transistor comes in a compact SOT-23 (TO-236AB) surface-mount package, which allows for a reduced board space and is suitable for high-density circuit designs.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), enabling the transistor to handle significant power levels suitable for a variety of applications.

Applications

The PMR290UNE,115 is versatile and can be used in a range of electronic devices and systems. Some of the typical applications include:

  • DC/DC converters
  • Power management circuits
  • Load switches
  • Battery management systems
  • Motor control circuits

Environmental and Quality Standards

Committed to environmental sustainability and quality, the PMR290UNE,115 meets various international standards. It is RoHS compliant, ensuring that it is free from hazardous substances. Additionally, it adheres to the stringent quality requirements set by the industry, guaranteeing reliability and performance for critical applications.

Conclusion

With its remarkable efficiency, high-speed switching capabilities, and compact size, the PMR290UNE,115 from NXP Semiconductors is an excellent choice for designers looking to optimize power management solutions in their electronic products. Its adherence to environmental and quality standards further assures its suitability for a wide array of applications, making it a valuable component in the semiconductor market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,470 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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