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PMT200EN,135

Part No PMT200EN,135
Manufacturer NXP / Nexperia
Catalog FETs - Single
Description MOSFET N-CH 100V 1.8A SC-73
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP USA Inc.
Packaging Reel
Part Status Obsolete (End Of Life)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 1.8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 235mOhm at 1.5A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 10nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 475pF at 80V
Power Dissipation (Maximum) 800mW , 8.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package SOT-223
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 812373-PMT200EN,135
Ultra Librarian 3D Model Ultra Librarian PMT200EN,135 CAD Model

Description

The PMT200EN,135 is a cutting-edge MOSFET transistor developed by NXP Semiconductors, a leader in the semiconductor industry. This product is designed to meet the high demands of modern electronic circuits, offering both high efficiency and reliability. It is well-suited for a wide range of applications, including power management, switching, and amplification tasks in consumer electronics, automotive systems, and industrial equipment.

Key Features

  • Low On-Resistance: The PMT200EN,135 features a low on-resistance, which ensures minimal power loss during operation and improves overall efficiency.
  • High-Speed Switching: With its ability to switch on and off rapidly, this MOSFET is ideal for high-frequency applications, resulting in better performance for power converters and inverters.
  • Enhanced Thermal Performance: The device is encapsulated in a compact, surface-mount package that enhances thermal dissipation, enabling it to operate at lower temperatures and extend its lifespan.
  • Robustness: Engineered for durability, the PMT200EN,135 can withstand high energy pulses in the avalanche and commutation modes, making it a reliable choice for rugged environments.
  • Low Gate Charge: The low gate charge of the device facilitates faster switching and reduces switching losses, which is crucial for power efficiency.

Applications

The versatility of the PMT200EN,135 allows it to be used in a variety of applications, including:

  • DC-DC Converters
  • Power Supply Units
  • Motor Drives
  • LED Lighting Systems
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Technical Specifications

The PMT200EN,135 is characterized by its high performance and efficiency, with technical specifications that include:

  • Drain-Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 100A
  • Power Dissipation (Pd): 3.1W
  • Operating Temperature Range: -55°C to 150°C

With its robust feature set, the PMT200EN,135 from NXP Semiconductors represents a reliable and efficient solution for engineers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8501 $59.5070
170+ $0.6976 $118.5920
260+ $0.6757 $175.6820
355+ $0.6537 $232.0635
460+ $0.6318 $290.6280
615+ $0.5671 $348.7665
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Prices are subject to market and will be confirmed after the order is placed.
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Availability: 15,000 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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