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PMV40UN2R

Part No PMV40UN2R
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.7A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 635pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 490mW (Ta)
Maximum Rds On at Id,Vgs 44 mOhm @ 3.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-236AB (SOT23)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 004421-PMV40UN2R
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PMV40UN2R CAD Model

Description

Introducing the NXP PMV40UN2R MOSFET

The PMV40UN2R is a state-of-the-art, N-channel TrenchMOS™ very low-level gate charge MOSFET produced by the renowned semiconductor manufacturer, NXP Semiconductors. Designed to deliver high efficiency and power density, this MOSFET is a perfect choice for a wide range of applications, including but not limited to, load switches, power management, and high-speed switching circuits.

Key Features

      
  • Low Threshold Voltage: With a low threshold voltage, the PMV40UN2R ensures low-voltage operation, making it ideal for battery-operated devices and energy-sensitive applications.
  •   
  • High-Speed Switching: The device's fast switching speed improves performance in circuits where frequency and responsiveness are critical, such as in DC-DC converters.
  •   
  • Low On-State Resistance: The MOSFET boasts an ultra-low on-state resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency.
  •   
  • High Continuous Drain Current: It supports a high continuous drain current (ID), providing robust current handling capabilities for demanding power applications.
  •   
  • Enhanced Thermal Performance: The PMV40UN2R is encapsulated in a small, leadless package that ensures excellent thermal management and reduced footprint on PCBs.

Applications

The versatility of the PMV40UN2R MOSFET allows it to be used in a variety of applications. It is particularly well-suited for:

      
  • Power supply circuits
  •   
  • Battery management systems
  •   
  • Motor control modules
  •   
  • DC-DC converters
  •   
  • Load switches
  •   
  • Portable and wearable technology

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and reliability, and the PMV40UN2R is no exception. It is built to meet the highest standards, ensuring long-term performance even under challenging conditions. The device's robustness is further supported by its compliance with industry-standard tests and certifications.

In summary, the PMV40UN2R from NXP is a high-performance, energy-efficient solution for contemporary electronic designs, offering designers a compact, reliable, and powerful component that meets the demands of modern power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.1920 $50.8800
560+ $0.1799 $100.7440
865+ $0.1738 $150.3370
1,240+ $0.1616 $200.3840
1,610+ $0.1556 $250.5160
2,010+ $0.1495 $300.4950
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 304,030 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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