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PSMN003-30P

Part No PSMN003-30P
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 170nC @ 10V
Max Input Capacitance 9200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 2.8 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 062137-PSMN003-30P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN003-30P CAD Model

Description

Introducing the PSMN003-30P MOSFET from NXP Semiconductors

The PSMN003-30P is a state-of-the-art power MOSFET brought to you by NXP Semiconductors, a trusted name in the industry. Designed to deliver high performance, efficiency, and reliability, this MOSFET is an ideal choice for a wide range of applications, including switching converters, motor drives, and power management systems.

Key Features

  • Low On-State Resistance: The PSMN003-30P boasts an exceptionally low on-state resistance (R<sub>DS(on)) of just 30 mΩ at V<sub>GS = 10 V. This low resistance ensures efficient operation and minimizes power losses, making it perfect for high-efficiency power designs.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of up to 100 A at 25°C, this MOSFET can handle high current applications with ease, providing robust performance under demanding conditions.
  • Enhanced Thermal Performance: The PSMN003-30P features an optimized package design for improved thermal resistance, allowing for better heat dissipation and increased reliability during high power operation.
  • Fast Switching Speed: Fast switching characteristics are critical in reducing switching losses, and this MOSFET delivers with its rapid switching capabilities, contributing to overall system efficiency.
  • Robustness: Engineered for durability, the PSMN003-30P is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring a long operational lifespan.

Applications

The versatility of the PSMN003-30P allows it to be used in various high-performance applications, including:

  • DC/DC converters
  • AC/DC power supplies
  • Motor control circuits
  • Automotive applications
  • Power management systems

Product Specifications

The PSMN003-30P operates within a drain-source voltage (V<sub>DS) of 30V, making it suitable for low voltage applications. The product comes in a robust and compact LFPAK package, which not only saves space but also provides excellent mechanical and thermal characteristics.

Quality and Reliability

NXP Semiconductors is known for its commitment to quality and the PSMN003-30P is no exception. It is produced in state-of-the-art manufacturing facilities, ensuring that each component meets the highest standards of performance and reliability. With the PSMN003-30P, designers can be confident in creating systems that are both powerful and dependable.

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