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PSMN004-55W,127

Part No PSMN004-55W,127
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A SOT429 / Trans MOSFET N-CH Si 55V 100A 3-Pin(3+Tab) TO-247 Rail
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer NXP
Series TrenchMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 226nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 13000pF @ 25V
Vgs (Maximum) ±15V
Power Dissipation (Maximum) 300W (Tc)
Rds On (Maximum) @ Id, Vgs 4.2 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247-3
Package TO-247-3
Win Source Part Number 792611-PSMN004-55W,127
Popularity Medium
Supply and Demand Status Limited
Family Name PSMN004-55W
Introduction Date October 01, 1999
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PSMN004-55W,127 CAD Model

Description

The PSMN004-55W,127 is a high-performance Power MOSFET brought to you by NXP Semiconductors. This device is engineered to deliver efficient power conversion with a minimal footprint, making it an ideal choice for a wide array of applications, including DC-DC converters, motor drives, and power management systems. The PSMN004-55W,127 is designed to handle high currents and voltages with ease, ensuring reliable operation even under challenging conditions.

Key Features

  • Low On-Resistance: This MOSFET features an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Current Capability: With the ability to support high continuous drain currents, the PSMN004-55W,127 is well-suited for applications that require robust power handling capabilities.
  • Fast Switching Performance: The fast switching characteristics of this MOSFET make it an excellent choice for high-frequency power switching applications, leading to improved performance and reduced switching losses.
  • Enhanced Thermal Performance: The PSMN004-55W,127 is designed with an optimized thermal footprint that ensures efficient heat dissipation, contributing to a longer lifespan and stable performance under varying thermal conditions.
  • Low Gate Charge: A low gate charge allows for reduced driving power, which is beneficial in minimizing the overall power consumption of the system it's integrated into.

Applications

The versatility of the PSMN004-55W,127 MOSFET makes it suitable for a diverse range of applications. It is commonly used in:

  • Switch Mode Power Supplies (SMPS)
  • Power Inverters
  • DC-DC Converters
  • Motor Control Circuits
  • Battery Management Systems
  • High-Efficiency Power Management Designs

Product Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) 55V Continuous Drain Current (I<sub>D) To be specified Power Dissipation (P<sub>D) To be specified Operating Temperature Range To be specified

For detailed specifications and application support, please refer to the official NXP datasheet for the PSMN004-55W,127 Power MOSFET.

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