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PSMN012-60YS

Part No PSMN012-60YS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer NXP
Win Source Part Number 1240079-PSMN012-60YS
Manufacturer Homepage www.nxp.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN012-60YS CAD Model

Description

The PSMN012-60YS is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by the renowned NXP Semiconductors. This power MOSFET is part of NXP's NextPowerS3 portfolio, characterized by its low on-state resistance and high switching performance, making it an ideal component for a wide range of power management applications.

Key Features:

  • Low On-State Resistance (R<sub>DS(on)): The PSMN012-60YS boasts an extremely low R<sub>DS(on) of only 12 mΩ at a gate-source voltage of 10 V, which enhances the efficiency of power conversion by minimizing conduction losses.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 60 A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • Low Q<sub>g and Q<sub>gd: The device features low gate charge (Q<sub>g) and gate-drain charge (Q<sub>gd), which translates to faster switching speeds and reduced switching losses.
  • High Avalanche Ruggedness: The PSMN012-60YS is engineered for high ruggedness and reliability, capable of withstanding high energy pulses in the avalanche and commutation modes.
  • 175°C Operating Temperature: It is designed to operate at a junction temperature range up to 175°C, ensuring stability and performance under high temperature conditions.

Applications:

The PSMN012-60YS is versatile and can be used in various applications, including:

  • DC/DC converters
  • Motor drives
  • Power supply units
  • Automotive systems
  • Computing systems
  • Switching regulators

This MOSFET is presented in a compact LFPAK56 (Power-SO8) package, which not only ensures a small footprint but also provides excellent thermal performance and low parasitic inductance. The PSMN012-60YS is an optimal solution for designers looking to achieve higher efficiency and power density in their circuits.

With its robust construction and high-performance characteristics, the PSMN012-60YS from NXP Semiconductors is a top-tier component that meets the rigorous demands of modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6698 $60.2820
215+ $0.5497 $118.1855
330+ $0.5325 $175.7250
450+ $0.5153 $231.8850
580+ $0.4982 $288.9560
780+ $0.4465 $348.2700
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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