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PSMN012-80PS

Part No PSMN012-80PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 74A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 2782pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 148W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210276-PSMN012-80PS
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PSMN012-80PS CAD Model

Description

The PSMN012-80PS is a state-of-the-art Power MOSFET brought to you by NXP Semiconductors, a leader in high-performance mixed-signal electronics. This MOSFET is part of NXP's extensive portfolio designed to offer advanced energy efficiency, reduced heat, and improved power management to a wide array of applications.

Key Features:

  • Low On-State Resistance: The PSMN012-80PS features an extremely low on-state resistance (R<sub>DS(on)) of just 12 mΩ at V<sub>GS = 10 V, ensuring efficient power conduction and minimal voltage drop across the device when it is in the "on" state.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 80 A, this MOSFET can handle high current loads, making it suitable for demanding applications.
  • High-Speed Switching: Designed for fast switching, the PSMN012-80PS reduces switching losses and is ideal for high-frequency power conversion systems.
  • Enhanced Thermal Performance: The MOSFET comes in a robust package that enhances thermal performance and reliability, ensuring stable operation even under high stress conditions.
  • Low Gate Charge: A low total gate charge (Q<sub>G) facilitates efficient gate control and faster switching speeds, which is critical for power efficiency.

Applications:

The PSMN012-80PS is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Computing and server power supplies
  • Automotive systems
  • Renewable energy inverters

Quality and Reliability:

NXP's commitment to quality ensures that the PSMN012-80PS MOSFET meets the highest standards for performance and reliability. It is designed to withstand rigorous conditions and is compliant with industry-standard quality tests.

Whether you are designing power supplies for consumer electronics or industrial automation systems, the PSMN012-80PS from NXP offers the efficiency, power handling, and thermal performance required for today's advanced electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2027 $54.1215
105+ $0.9869 $103.6245
160+ $0.9560 $152.9600
220+ $0.9252 $203.5440
280+ $0.8944 $250.4320
375+ $0.8018 $300.6750
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,080 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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