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PSMN039-100YS,115

Part No PSMN039-100YS,115
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH LFPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 28.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1847pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 39.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package LFPAK56, Power-SO8
Dimension SC-100, SOT-669
Win Source Part Number 139530-PSMN039-100YS,115
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN039-100YS,115 CAD Model

Description

The PSMN039-100YS,115 is a high-performance, N-channel MOSFET produced by NXP Semiconductors, a leader in the field of high-quality electronic components. This particular MOSFET is designed to deliver excellent power efficiency and reliability for a wide range of applications, including power supplies, motor controls, and general-purpose switching tasks.

Key Features:

  • Low On-Resistance: The PSMN039-100YS,115 boasts an exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capability: With the ability to handle continuous drain currents up to 100A, this MOSFET can manage high-power applications with ease.
  • High-Speed Switching: The device is optimized for fast switching performance, which is critical for reducing switching losses and improving the performance of power converters and other switched-mode applications.
  • Robust Thermal Management: The PSMN039-100YS,115 is encapsulated in a TO-220 package, known for its excellent thermal dissipation properties. This ensures that the device remains cool even under heavy loads, thereby extending its lifespan.
  • Enhanced Durability: The MOSFET is constructed with rugged features that make it resistant to harsh conditions, including high energy pulses in the avalanche and commutation modes.

Applications:

The versatility of the PSMN039-100YS,115 MOSFET allows it to be utilized in numerous applications across various industries. Some of the common applications include:

  • DC/DC converters
  • Power management systems
  • Automotive electronics
  • Uninterruptible power supplies (UPS)
  • Switched-mode power supplies (SMPS)
  • Motor drives and inverters

Quality and Reliability:

NXP Semiconductors is committed to providing products that meet the highest standards of quality and reliability. The PSMN039-100YS,115 is no exception, as it undergoes rigorous testing and quality control measures to ensure that it performs to the specifications under a wide range of conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5071 $50.1420
49+ $2.0572 $100.8028
76+ $1.9929 $151.4604
104+ $1.9286 $200.5744
135+ $1.8643 $251.6805
180+ $1.6714 $300.8520
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Availability: 9,440 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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