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PSMN2R0-30YLE

Part No PSMN2R0-30YLE
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 09+
Reference case SOT669
Manufacturer NXP
Manufacturer Homepage www.nxp.com
Win Source Part Number 711714-PSMN2R0-30YLE
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian PSMN2R0-30YLE CAD Model

Description

Introducing the PSMN2R0-30YLE MOSFET from NXP Semiconductors

The PSMN2R0-30YLE is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by NXP Semiconductors. This power MOSFET is part of NXP's extensive line of energy-efficient, high-density power management components, and it is specifically engineered to address the demanding requirements of modern electronic applications.

With its low on-state resistance (R<sub>DS(on)) of just 2.0 mΩ at a gate drive of 10 V, the PSMN2R0-30YLE provides excellent power efficiency, which is crucial for reducing energy loss in high-power and high-switching-frequency applications. The device is capable of handling continuous drain currents up to 100 A, making it suitable for heavy-duty operations.

The PSMN2R0-30YLE operates at a drain-source voltage (V<sub>DS) of 30 V, which allows for a wide range of applications in power supply circuits, motor control units, and other power-intensive modules. The MOSFET comes in a compact LFPAK56 (Power-SO8) package, which not only saves valuable board space but also provides excellent thermal performance due to its low package resistance and enhanced heat dissipation characteristics.

One of the key features of the PSMN2R0-30YLE is its logic level gate drive capability, which enables it to be driven directly from microcontrollers and other logic devices without the need for additional driver circuits. This simplifies design and reduces component count, leading to both cost and space savings.

Furthermore, the PSMN2R0-30YLE is designed with ruggedness in mind. It is characterized by its high continuous current rating and robustness against repetitive avalanche events, ensuring long-term reliability and stability in challenging environments. Additionally, the device is RoHS compliant, adhering to the latest environmental standards and regulations for electronic components.

In summary, the PSMN2R0-30YLE MOSFET from NXP Semiconductors is a versatile and reliable component that offers a blend of high performance, energy efficiency, and compact form factor. It is an ideal choice for designers looking to enhance power management in a wide array of applications, from industrial automation to consumer electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1494 $51.7230
110+ $0.9431 $103.7410
165+ $0.9137 $150.7605
230+ $0.8842 $203.3660
295+ $0.8547 $252.1365
395+ $0.7663 $302.6885
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 49,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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