The PSMN2R2-30YLC,115 is a high-performance, N-channel enhancement mode Field Effect Transistor (FET) designed and manufactured by NXP Semiconductors. This power MOSFET is part of NXP's extensive portfolio of semiconductor products known for their reliability and cutting-edge technology. It is particularly suitable for applications requiring high efficiency and power density.

Key Features

• Low On-Resistance: With an RDS(on) of just 2.2mΩ, this MOSFET offers minimal conduction losses, making it ideal for high-efficiency power conversion applications.
• High Continuous Drain Current: It can handle a continuous drain current (ID) of up to 100A, providing robust performance for demanding applications.
• 30V Drain-Source Voltage: The device can sustain a maximum drain-source voltage (VDS) of 30V, suitable for a wide range of applications in the low to medium voltage range.
• Fast Switching Speed: The PSMN2R2-30YLC,115 is designed for fast switching, reducing switching losses and improving overall efficiency.
• High-Avalanche Energy Rating: It is capable of withstanding high energy pulses in the avalanche and commutation modes, which ensures reliability under harsh conditions.
• Low Gate Charge: A low gate charge (Qg) facilitates faster switching and reduced driver power consumption.
• Enhanced Thermal Performance: The MOSFET comes in a compact LFPAK33 package, which offers excellent thermal performance and a small footprint on the PCB.

Applications

The PSMN2R2-30YLC,115 is versatile and can be used in various applications, including:

• DC/DC converters
• Motor drives
• Power management systems
• Battery protection circuits
• Switching regulators
• Power inverters

Quality and Reliability

NXP Semiconductors is known for its commitment to quality, and the PSMN2R2-30YLC,115 is no exception. It is designed to meet the stringent requirements of the automotive industry, ensuring high reliability and performance under extreme conditions.

Environmental Compliance

This product is RoHS compliant, reflecting NXP's dedication to environmental sustainability and the global effort to reduce hazardous substances in electronic components.