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PSMN4R6-60PS

Part No PSMN4R6-60PS
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 70.8nC @ 10V
Max Input Capacitance 4426pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 211W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 210292-PSMN4R6-60PS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian PSMN4R6-60PS CAD Model

Description

Introducing the PSMN4R6-60PS Power MOSFET by NXP Semiconductors

The PSMN4R6-60PS is a high-performance Power MOSFET brought to you by NXP Semiconductors, a leader in the field of high-efficiency, high-speed power management solutions. Designed to cater to a wide range of applications, this device is a perfect blend of innovation and reliability, engineered to meet the demanding requirements of modern electronic circuits.

Key Features

  • Low On-Resistance: The PSMN4R6-60PS boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 4.6 mΩ at V<sub>GS = 10 V, which means it can handle high currents with minimal conduction losses, making it ideal for energy-sensitive applications.
  • High Efficiency: With its low R<sub>DS(on) and low gate charge (Q<sub>g), this MOSFET ensures high efficiency in power conversion, which is crucial for reducing heat generation and improving the overall performance of your system.
  • Robust Thermal Management: The PSMN4R6-60PS is encapsulated in a TO-220 package, known for its excellent thermal characteristics. This ensures that the MOSFET can operate reliably even under high power and temperature conditions.
  • High Switching Speed: The fast-switching capability of this MOSFET makes it suitable for high-frequency applications, where rapid switching is a prerequisite for efficient operation.
  • Avalanche Rated: This device is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring durability and long-term reliability.

Applications

The versatility of the PSMN4R6-60PS Power MOSFET allows it to be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Computing systems
  • Automotive applications
  • Switching power supplies

Why Choose the PSMN4R6-60PS?

When it comes to selecting a Power MOSFET for your next project, the PSMN4R6-60PS from NXP stands out for its exceptional balance of performance and robustness. Its low on-resistance and high efficiency make it an excellent choice for power-hungry applications, while its fast switching speed and thermal resilience make it adaptable to a broad spectrum of industrial, automotive, and computing tasks. With the PSMN4R6-60PS, engineers and designers can expect a reliable, high-quality component that will enhance the performance of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.4049 $58.8343
17+ $6.8965 $117.2405
26+ $6.6805 $173.6930
36+ $6.4645 $232.7220
47+ $6.2497 $293.7359
62+ $5.6029 $347.3798
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Availability: 32,400 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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